| PART |
Description |
Maker |
| IRHE7230 IRHE8230 IRHE3230 IRHE4230 JANSF2N7262U J |
200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package 200000kRad高可靠性单个N -沟道工贸署在18硬化MOSFET的引脚LCC封装
200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a 18-pin LCC package 20000kRad高可靠性单个N -沟道工贸署在18硬化MOSFET的引脚LCC封装
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| JANSR2N7390U JANSF2N7390U IRHE9230 IRHE93230 IRHE9 |
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a 18-pin LCC package
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a 18-pin LCC package
Simple Drive Requirements
|
International Rectifier
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| JANSR2N7426 IRHM9260 JANSF2N7426 IRHM93260 IRHM926 |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Simple Drive Requirements
|
IRF[International Rectifier]
|
| IRHNA597260 2129 IRHNA593260 IRHNA597260PBF |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
35.5 A, 200 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
|
IRF[International Rectifier]
|
| IRHMS597260 IRHMS593260 |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)
|
IRF[International Rectifier]
|
| IRHF593230 IRHF597230 |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
|
International Rectifier
|
| JANSR2N7426U MIL-PRF-19500_655 IRHNA9260 IRHNA9326 |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
|
IRF[International Rectifier]
|
| JANTX2N6766 JANTXV2N6766 2N6766 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
|
International Rectifier
|
| 2N6784 |
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
|
International Rectifier
|
