| PART |
Description |
Maker |
| MTN2N70I3 |
N-Channel Enhancement Mode Power MOSF
|
Cystech Electonics Corp.
|
| 8N90G-TA3-T |
8 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 11N90 11N90L-TF1-T 11N90G-TF1-T 11N90G-TA3-T 11N90 |
11 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 2N90L-TN3-R 2N90G-TN3-R 2N90G-TF3-T 2N90L-TF3-T |
2 Amps, 900 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| CM900HB-90H |
Single IGBTMOD?/a> HVIGBT 900 Amperes/4500 Volts
Single IGBTMOD⑩ HVIGBT 900 Amperes/4500 Volts
Single IGBTMODHVIGBT 900 Amperes/4500 Volts
Single IGBTMOD HVIGBT 900 Amperes/4500 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| SDR9369M SDR936DM |
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30放大器至9000纳秒超快速整
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-254AA
|
Solid State Devices, Inc.
Micron Technology, Inc.
|
| 2SK2700 |
3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| 2SK2006-4072 |
5 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| IXFT16N90Q IXFH16N90Q IXFK16N90Q |
HiPerFET Power MOSFETs Q-Class 16 A, 900 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| NTP27N06L-D NTB27N06L NTP27N06L |
Power MOSFET 27Amps, 60 Volts,Logic Level N-Channel TO-220(27A, 60 V,逻辑电平，N通道，TO-220封装的功率MOSFET) 27 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFET 27 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK
|
ITT, Corp.
ON Semiconductor
|
| STW6NC90Z |
5.2 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
STMICROELECTRONICS
|
| 2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION
|
NEC
|
|
