| PART |
Description |
Maker |
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| PHD16N03LT |
N-channel TrenchMOS?/a> logic level FET
N-channel Trenchmos (tm) logic level FET
N-channel TrenchMOS⑩ logic level FET
From old datasheet system
N-channel TrenchMOSlogic level FET 16 A, 30 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| BUK9MHH-65PNN |
Dual TrenchPLUS FET Logic Level FET
|
NXP Semiconductors N.V.
|
| BUK9MPP-65PLL |
Dual TrenchPLUS FET Logic Level FET
|
NXP Semiconductors
|
| BUK9MNN-65PKK |
Dual TrenchPLUS FET Logic Level FET
|
NXP Semiconductors N.V.
|
| D2230UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET 金属门射频硅场效应管
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
| PS7901D-1A |
.NEPOC Series. (OCMOS FET) 4-PIN SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE (0.75 pF) 1-ch Optical Coupled MOS FET
|
Renesas Electronics Corporation
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
