| PART |
Description |
Maker |
| HS-6617RH-T 5962R9570801TXC |
Radiation Hardened 2K x 8 CMOS PROM(???灏?MOS 16K???绋?OM)
Radiation Hardened 2K x 8 CMOS PROM 2K X 8 OTPROM, 100 ns, CDFP24
Radiation Hardened 2K x 8 CMOS PROM(抗辐射CMOS 16K可编程ROM)
|
Intersil, Corp.
Intersil Corporation
|
| 5962R9570801VXC 5962R9570801QJC 5962R9570801QXC HS |
Radiation Hardened 2K x 8 CMOS PROM
|
Intersil Corporation
|
| WS57C45-1 WS57C45-35 WS57C45-35TMB WS57C45-45 WS57 |
WS57C45 MILITARY 2K X 8 REGISTERED CMOS PROM/RPROM
HIGH-SPEED 2K x 8 REGISTERED CMOS PROM/RPROM
MILITARY 2K x 8 REGISTERED CMOS PROM/RPROM
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 5962F0151701QXA 5962F0151701QXC 5962F0151701QXX 59 |
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish solder. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish gold. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish optional. Total dose 3E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish solder. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish gold. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class V. 65ns acces time. Lead finish optional. Total dose 5E5 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish solder. Total dose 1E6 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish gold. Total dose 1E6 rads(Si).
Radiation-hardenet 32K x 8 PROM: SMD. Class Q. 65ns acces time. Lead finish optional. Total dose 1E6 rads(Si).
Radiation-hardenet 32K x 8 PROM. 65ns acces time. Lead finish optional.
|
Aeroflex Circuit Technology
|
| S29CD032J0MFAM033 S29CD016J0MQFM130 S29CD016J0PQFM |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
|
Spansion, Inc.
SPANSION LLC
|
| MX23C8000 MX23C8000MC-10 MX23C8000MC-12 MX23C8000M |
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 150 ns, PDIP32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PDIP32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 200 ns, PQCC32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 100 ns, PQCC32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PQCC32
|
Macronix International Co., Ltd.
|
| N01L6183AB27I N01L6183AB27IT N01L6183AT27I N01L618 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
ON Semiconductor
|
| N01L6183A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
ON Semiconductor
|
| AM29F016 AM29F016-90 AM29F016-75 AM29F016-75FIB AM |
LM330 3-Terminal Positive Regulator; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
16-Megabit097152*8-bit）CMOS 5.0 Volt-only，sector Erase Flash memory
LM32 Dual Thermal Diode Temperature Sensor with SensorPath™ Bus; ; Qty per Container: 1
LM3310 Step-Up PWM DC/DC Converter with Integrated Op-Amp and Gate Pulse Modulation Switch; Package: LLP; No of Pins: 24; Qty per Container: 4500; Container: Reel 16兆位097152 × 8位）CMOS 5.0伏只，扇区擦除闪
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO44
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 90 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 150 ns, PDSO48
16-Megabit (2,097,152 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 2M X 8 FLASH 5V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc.
SPANSION LLC
|
| N01L163WN1A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 1MB的超低功耗CMOS SRAM的异
|
NanoAmp Solutions, Inc.
|
| N01L83W2AT5I N01L83W2AT5IT N01L83W2AN25I N01L83W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 8 bit
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit
|
ON Semiconductor
|
