PART |
Description |
Maker |
AS5C2568 AS5C2568DJ-20_XT AS5C2568DJ-12_883C AS5C2 |
SRAM 32K x 8 SRAM SRAM MEMORY ARRAY SRAM 静态存储器
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ETC AUSTIN[Austin Semiconductor] Electronic Theatre Controls, Inc.
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AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO From old datasheet system Sync SRAM - 3.3V
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Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC
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EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 |
10ns; 3.3V power supply; 128K x 24 SRAM SRAM MCP SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3 15ns; 3.3V power supply; 128K x 24 SRAM
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Electronic Theatre Controls, Inc. White Electronic Designs
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CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
GM76U256C GM76U256CE GM76U256CL GM76U256CLE GM76U2 |
x8 SRAM 32K X 8 STANDARD SRAM, 120 ns, PDSO28 x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28 32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
GS81032AT-150I GS81032AT-138I GS81032AT-133I GS810 |
18ns 66MHz 32K x 32 1Mb synchronous burst SRAM 12ns 100MHz 32K x 32 1Mb synchronous burst SRAM 10ns 133MHz 32K x 32 1Mb synchronous burst SRAM 9.7ns 138MHz 32K x 32 1Mb synchronous burst SRAM 11ns 117MHz 32K x 32 1Mb synchronous burst SRAM 9ns 150MHz 32K x 32 1Mb synchronous burst SRAM 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 9.7 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 18 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM 32K X 32 CACHE SRAM, 10 ns, PQFP100 32K x 32 1M Synchronous Burst SRAM
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GSI Technology, Inc.
|
GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K X 32 CACHE SRAM, 10 ns, PQFP100 5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器 2M Synchronous Burst SRAM 200万同步突发静态存储器 Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm 64K x 32 / 2M Synchronous Burst SRAM 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM
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GSI Technology Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
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WS512K32-70 WS512K32-85 WS512K32-100 WS512K32F-85H |
85ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????0ns锛? 512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????00ns锛? 512Kx32 SRAM Module(512Kx32静态RAM模块(存取时5ns 512Kx32 SRAM Module(512Kx32静态RAM模块(存取时0ns
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White Electronic Designs Corporation
|
M48Z2M1Y10 M48Z2M1V-85PL1 M48Z2M1Y-85PL1 M48Z2M1Y- |
5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER庐 SRAM 5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER? SRAM 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36
|
STMicroelectronics
|
EDI8C32128C WS128K32-XXX EDI8C32128LP17EI |
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块(存取时5705555ns 128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块(存取时5705555ns 128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块(存取时57055555ns 128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块(存取时57205555ns 128Kx32 SRAM的模块(低功耗的CMOS28Kx32静态内存模块(存取时间15,17,20,25,35,45,55纳秒)) 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
|
White Electronic Designs Corporation TE Connectivity, Ltd.
|
UPD4382362GF-A75B UPD4382322GF-A75B UPD4382182GF-A |
x18 Fast Synchronous SRAM x16 Fast Synchronous SRAM x16快速同步SRAM x36 Fast Synchronous SRAM x36快速同步SRAM x32 Fast Synchronous SRAM X32号,快速同步SRAM
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Electronic Theatre Controls, Inc.
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