| PART |
Description |
Maker |
| M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费（符合RoHS
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HDD32M72D9RPW-13A HDD32M72D9RPW-13B |
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 32Mx8, 4Banks 8K Ref., 184Pin-DIMM with PLL & Register
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 32Mx8, 4Banks 8K Ref., 184Pin-DIMM with PLL & Register 256MB的DDR SDRAM内存模块2Mx72bit），基于2Mx8Banks 8K的参考。，184Pin - DIMM内存的锁相环
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| M470L6524DU0-LCC M470L2923DV0-CA2 M470L2923DV0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| NT256D64S8HA0G-6 |
184pin Two Bank Unbuffered DDR SDRAM MODULE
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| NT256D64S88ABG NT256D64S88ABG-6 |
184pin One Bank Unbuffered DDR SDRAM MODULE
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| M378T6553CZ3-CCC M378T6553CZ3-CD5 M378T6553CZ3-CE6 |
DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
| M470L6524BTU0-CLCC M470L3324BTU0-CLB3 M470L6524BTU |
RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die DDR SDRAM的缓冲模18 4针缓冲模块基12Mb乙芯
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M312L5128MT0 M312L5128MT0-CA0 M312L5128MT0-CA2 M31 |
DDR SDRAM Registered Module ( TSOP-II ) 184pin Registered Module based on 1Gb M-die with 1,200mil Height & 72-bit ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HDD64M72D1 HDD64M72D18RWP-10A HDD64M72D18RPW HDD64 |
DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register
|
http://
Hanbit Electronics Co.,Ltd
|
| HYMD116645BL8-K HYMD116645BL8-L HYMD116645BL8-M HY |
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX64|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 16MX64 |的CMOS |内存| 184PIN |塑料
16Mx64|2.5V|M/K/H/L|x8|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
http://
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
