| PART |
Description |
Maker |
| TPCP8J01 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) Silicon NPN Epitaxial Type
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
MOSFET TPC Series
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MP2B5038 MP2B5085 MP2B5052 MP2B5150 |
A multi chip power device for a Multi-Oscillated Current Resonant type Converter
|
Fuji Electric
|
| TH50VSF4682AASB TH50VSF4683AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| TPCF8B01 |
MOSFET TPC Series
TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode
|
TOSHIBA[Toshiba Semiconductor]
|
| FMBA56 |
PNP Multi-Chip General Purpose Amplifier 500 mA, 80 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MMDT5401 |
Multi-Chip (PNP PNP) Transistor
|
SeCoS Halbleitertechnologie GmbH
|
| SSM6H19NU |
Multi-chip discrete device (N-ch SBD)
|
TOSHIBA
|
| FMB200 |
PNP Multi-Chip General Purpose Amplifier
|
Fairchild Semiconductor
|
| FJYF2906 FJYF2906TF FJYF2906TFNL |
PNP Multi-Chip General Purpose Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| MMBTA92LT1_D ON2140 MMBTA93LT1 |
High Voltage Transistors(PNP Silicon) 50 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
*Motorola Preferred Device
|
ON Semiconductor
|
| 2N3906 2N3905 ON0043 2N3905-D |
General Purpose Transistors PNP Silicon
Motorola Preferred Device
From old datasheet system
General Purpose Transistors(PNP Silicon)
|
ONSEMI[ON Semiconductor]
|
