| PART |
Description |
Maker |
| W25Q16CVSSIL W25Q16CVSFIL W25Q16CVSNIL W25Q16CVSTI |
3V 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
|
Winbond
|
| W25Q16BVZPIG W25Q16BVSNIG W25Q16BVDAIG W25Q16BVDAI |
16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
|
Winbond
|
| W25P80VSSIG W25P16 W25P16VSI W25P16VFI W25P16VFIG |
8M-BIT AND 16M-BIT SERIAL FLASH MEMORY
|
WINBOND[Winbond]
|
| W25P80 |
8M-BIT AND 16M-BIT SERIAL FLASH MEMORY
|
Winbond
|
| W25X16AVSFIG W25X16AVSNIG W25X16AVSSIG W25X16AVZPI |
16M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| W25P40-VSNI W25P40-VSNIG W25P40 W25P20 W25P10-VSNI |
4 Mbit Uniform Sector, Serial Flash Memory 2M X 1 FLASH 2.7V PROM, PDSO8
4M X 1 FLASH 2.7V PROM, PDSO8 0.150 INCH, GREEN, PLASTIC, SOIC-8
1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI
|
Winbond Electronics, Corp.
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9F2808U0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-YIB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| EN25F16 |
16M Serial Flash Memory
|
EON
|
| MBM29DL161BE-90PBT MBM29DL161BE-70TR MBM29DL161BE- |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| W25Q16FWSSIQ |
1.8V 16M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
|
Winbond
|
| MX69F1602C3TXBI-70 MX69F1602C3TXBI-90 |
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY SPECIALTY MEMORY CIRCUIT, PBGA66
|
Macronix International Co., Ltd.
|
