| PART |
Description |
Maker |
| FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
High-Speed Switching Composite Diode Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
|
ON Semiconductor
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| 2SK182607 2SK1826 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
|
Toshiba Semiconductor
|
| IKW40N65F5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
| 2SC3811 |
Silicon NPN epitaxial planer type(For high speed switching)
Transistor
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| 2SJ527 2SJ527L 2SJ527S |
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| RJL6018DPK RJL6018DPK-15 RJL6018DPK-00T0 RJL6018DP |
600V - 27A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N1506P-15 |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FC807 |
High-Speed Switching Composite Diode Anode Common
|
SANYO[Sanyo Semicon Device]
|
| HSC119 |
Silicon Epitaxial Planar Diode for High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| FS50SM-5A FS50SM-5A-A8 |
High-Speed Switching Use Nch Power MOS FET
|
Renesas Electronics Corporation.
|
