PART |
Description |
Maker |
CLY2 |
High Power Packaged GaAs FET; 23.5 dBm
|
TriQuint Semiconductor
|
SHF-0186 |
DC-12 GHz, 0.5 Watt AlGaAs/GaAs HFET 的DC - 12千兆赫,0.5瓦的AlGaAs /砷化镓异质结场效应晶体管 DC-12 GHz 0.5 Watt AlGaAs/GaAs HFET
|
Electronic Theatre Controls, Inc. ETC[ETC] Stanford Microdevices
|
PWR-6G |
USB Power Sensor 50Ω -30 dBm to 20 dBm, 1 to 6000 MHz USB Power Sensor 50楼? -30 dBm to 20 dBm, 1 to 6000 MHz
|
Mini-Circuits
|
MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke 0.5-2.5 GHz Ultralinear Mixer w/LO Buffer 8.5 - 11 GHz 6-bit Phase Shifter Low Noise Amp, SB Gain Block X-band Discrete Power pHEMT Ku-band Discrete Power pHEMT 18mm HFET 24mm HFET Cell-Band CDMA PA Module; 1-Bit Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
|
FP1189-PCB-900 FP1189-PCB-1900 |
1/2 watt HFET
|
WJ Communications
|
TGF4260-SCC |
9.6 mm Discrete HFET
|
TriQuint Semiconductor,Inc.
|
FP2189-PCB1900S FP2189-PCB2140S FP2189 FP2189-PCB9 |
high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount 高性能1瓦异质结场效应晶体管(异质结场效应管)在低成本的SOT - 89表面贴装 high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount
|
Electronic Theatre Controls, Inc. WJ Communications ETC[ETC] List of Unclassifed Manufacturers
|
TGF4250-SCC |
DC - 10.5 GHz Discrete HFET
|
TRIQUINT[TriQuint Semiconductor]
|
FP1189-PCB2140S |
1/2 - Watt HFET 1 / 2 -瓦特异质结场效应晶体
|
Central Semiconductor, Corp.
|
SHF-0189 |
0.05 - 6 GHz, 0.5 Watt GaAs HFET
|
Electronic Theatre Controls, Inc.
|
DBM1915NP-R40 DBM1915NP-R33 DBM1915NP-R19 DBM1915N |
1 ELEMENT, 0.58 uH, GENERAL PURPOSE INDUCTOR ROHS COMPLIANT POWER INDUCTORS Type: DBM Series POWER INDUCTORS , Pin Type: DBM Series
|
Sumida, Corp. Sumida Corporation
|
CGD942C |
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. CGD942C<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|