| PART |
Description |
Maker |
| CHF8838GNF500L CHF8838CNF08 |
150 W Power RF Flanged Chip Termination
|
Bourns Electronic Solutions
|
| CHF8838CNF500L CHF8838CNF |
150 W Power RF Flanged Chip Termination
|
BOURNS[Bourns Electronic Solutions]
|
| CHF9838CNF08 |
250 W Power RF Flanged Chip Termination
|
Bourns Electronic Solutions
|
| CHF5225CNF500L |
60 W Power RF Flanged Chip Termination 0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Bourns, Inc.
|
| C281P1.5UF20200V C282P1.5UF10200V C285P1.2UF10500V |
CAPACITOR, CERAMIC, MULTILAYER, 200 V, 1.5 uF, SURFACE MOUNT, 2825 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 200 V, 1.5 uF, SURFACE MOUNT, 3333 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, 1.2 uF, SURFACE MOUNT, 6560 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 200 V, 1.2 uF, SURFACE MOUNT, 4040 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 200 V, 1.8 uF, SURFACE MOUNT, 2825 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, 1.8 uF, SURFACE MOUNT, 5440 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 200 V, 1.5 uF, SURFACE MOUNT, 4040 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 200 V, 1.2 uF, SURFACE MOUNT, 2825 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, 1.2 uF, SURFACE MOUNT, 5440 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 200 V, 1.8 uF, SURFACE MOUNT, 4040 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, 1.5 uF, SURFACE MOUNT, 5440 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 200 V, 3.3 uF, SURFACE MOUNT, 16080 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, 3.9 uF, SURFACE MOUNT, 16080 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, 3.9 uF, SURFACE MOUNT, 11283 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 200 V, 3.3 uF, SURFACE MOUNT, 4040 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 200 V, 3.3 uF, SURFACE MOUNT, 6560 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, 3.9 uF, SURFACE MOUNT, 6560 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, 3.3 uF, SURFACE MOUNT, 6560 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, 3.3 uF, SURFACE MOUNT, 11283 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, 3.3 uF, SURFACE MOUNT, 16080 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 1000 V, 2.7 uF, SURFACE MOUNT, 11283 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 200 V, 2.7 uF, SURFACE MOUNT, 11283 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, 2.7 uF, SURFACE MOUNT, 11283 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, 8.2 uF, SURFACE MOUNT, 11283 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 1000 V, 0.1 uF, SURFACE MOUNT, 16080 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 10000 V, 0.01 uF, SURFACE MOUNT, 16080 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 3000 V, 0.1 uF, SURFACE MOUNT, 16080 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 2000 V, 0.1 uF, SURFACE MOUNT, 16080 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 200 V, 3.9 uF, SURFACE MOUNT, 16080 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 5000 V, 0.1 uF, SURFACE MOUNT, 16080 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 200 V, 2.7 uF, SURFACE MOUNT, 16080 CHIP
CAPACITOR, CERAMIC, MULTILAYER, 4000 V, 0.1 uF, SURFACE MOUNT, 16080 CHIP
|
Agilent Technologies, Inc.
Yageo, Corp.
Ecliptek, Corp.
SEMIKRON
Alliance Semiconductor, Corp.
Coilcraft, Inc.
SCHURTER AG
|
| CDR13BP0R3EBNP CDR13BP0R2EBNP CDR13BP0R1EBNP |
CAPACITOR, CERAMIC, MULTILAYER, 500 V, BP, 0.0000003 uF, SURFACE MOUNT CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, BP, 0.0000002 uF, SURFACE MOUNT CHIP
CAPACITOR, CERAMIC, MULTILAYER, 500 V, BP, 0.0000001 uF, SURFACE MOUNT CHIP
|
AVX, Corp.
|
| MTD1P50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM 1 A, 500 V, 15 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Motorola, Inc
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| ADC08D500CIYB ADC08D500EVAL |
High Performance, Low Power, Dual 8-Bit, 500 MSPS A/D Converter 高性能，低功耗，位，500 MSPS的A / D转换
|
Analog Devices, Inc.
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| MRF275G |
150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER F
|
MOTOROLA
|
|
