PART |
Description |
Maker |
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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MS1490 |
RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo... Advanced Power Technology
|
UTV005P |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 0.5; Gain (dB): 10; Vcc (V): 20; ICQ (A): 0.22; IMD Type (dB): -60; Case Style: 55FU-2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS From old datasheet system TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
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TOSHIBA[Toshiba Semiconductor]
|
BLT50_CNV_2 BLT50 BLT50-T |
UHF BAND, Si, NPN, RF POWER TRANSISTOR UHF power transistor From old datasheet system
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NXP Semiconductors N.V.
|
2SC3120 E000792 SC3120 |
TRANSISTOR (TV TUNER/ UHF MIXER/ VHF~UHF BAND RF AMPLIFIER APPLICATIONS) TRANSISTOR (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS) TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS From old datasheet system
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TOSHIBA[Toshiba Semiconductor]
|
NE5511279A NE5511279A-T1A NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET 邻舍7.5 V UHF频段射频功率硅劳工处场效应晶体管
|
NEC[NEC] NEC Corp. NEC, Corp.
|
BFM35 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
SEMELAB LTD
|
S-AU68M |
UHF BAND FM POWER AMPLIFIER MODULE
|
Toshiba Semiconductor
|
PD54003L-E |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
STMICROELECTRONICS
|
AP85035 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
STMICROELECTRONICS
|
RF1029 |
UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
MOTOROLA INC
|