| PART |
Description |
Maker |
| SGB30UFSMS SGB10UFSMS SGB15UFSMS SGB20UFSMS SGB25U |
60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| 2N7002LT3 2N7002LT1 L2N7003LT1 |
Small Signal MOSFET 115 mAmps 60 Volts
Small Signal MOSFET 115 mAmps/ 60 Volts
Small Signal MOSFET 115 mAmps, 60 Volts 小信号MOSFET 115 mAmps0伏特
|
http://
LRC[Leshan Radio Company]
Leshan Radio Company, Ltd.
|
| LBSS138WT1G |
Power MOSFET 200 mAmps, 50 Volts
|
Leshan Radio Company
|
| LBSS138DW1T1G S-LBSS138DW1T1G LBSS138DW1T3G |
Power MOSFET200 mAmps, 50 Volts N?Channel SC-88
|
Leshan Radio Company
|
| S-LBSS139LT1G |
Power MOSFET200 mAmps, 50 Volts N?Channel SOT-23
|
Leshan Radio Company
|
| L2N7002LT1 L2N7002LT1G |
Small Signal MOSFET 115 mAmps, 60 Volts
|
LRC[Leshan Radio Company]
|
| VN2222LL VN2222LLRLRM VN2222LLG VN2222LLRL VN2222L |
Small Signal MOSFET 150 mAmps, 60 Volts
|
ONSEMI[ON Semiconductor]
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
乐山无线电股份有限公
|
| MMBF170LT1-D |
Power MOSFET 500 mAmps, 60 Volts N-Channel SOT-23
|
ON Semiconductor
|
| NTES1N02 |
Power MOSFET 50 mAmps, 20 Volts N-Channel(50mA,20V,N沟道增强型MOS场效应管)
|
ON Semiconductor
|
| MMBF2202PT1-D |
Power MOSFET 300 mAmps, 20 Volts P-Channel SC-70/SOT-323
|
ON Semiconductor
|
| L2N7002LT1G11 L2N7002LT3G |
Small Signal MOSFET 115 mAmps, 60 Volts N?Channel SOT?3
|
Leshan Radio Company
|
