| PART |
Description |
Maker |
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc.
SPANSION LLC
|
| AS8FLC2M32BP-70/IT 5962-0824504HXC 5962-0824502HXC |
2M X 32 FLASH 3V PROM, 70 ns, CPGA66 HERMETIC SEALED, CERAMIC, HIP-66
2M X 32 FLASH 3V PROM, 70 ns, CQFP68
2M X 32 FLASH 3V PROM, 100 ns, CQFP68
|
Micross Components
|
| 53S441 53S440 |
(53S440 / 53S441) High Performance 1024 x 4 PROM TiW PROM Family
|
MM
|
| 63S440 |
(63S440 / 63S441) High Performance 1024 x 4 PROM TiW PROM Family
|
MM
|
| K8D3216UTC-PI07T K8D3216UTC-TC070 K8D3216UBC-DC070 |
2M X 16 FLASH 2.7V PROM, 70 ns, PDSO48 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
2M X 16 FLASH 2.7V PROM, 70 ns, PBGA48 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48
2M X 16 FLASH 2.7V PROM, 80 ns, PBGA48
|
Electronic Theatre Controls, Inc.
Samsung Semiconductor Co., Ltd.
|
| M29F200FB55N6F2 M29F800FB55N3F2 M29F800FB55N3S2 M2 |
128K X 16 FLASH 5V PROM, 55 ns, PDSO48
512K X 16 FLASH 5V PROM, 55 ns, PDSO48
1M X 16 FLASH 5V PROM, 55 ns, PDSO48
128K X 16 FLASH 5V PROM, 55 ns, PDSO44
256K X 16 FLASH 5V PROM, 55 ns, PDSO48
|
NUMONYX
|
| AM29DL16XC AM29DL164CB80WCI AM29DL164CB120WCE AM29 |
Am29DL16xC - 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only. Simultaneous Operation Flash Memory Am29DL16xC - 16兆位米8 1个M x 16位）.0伏的CMOS只。同时作业闪
2M X 8 FLASH 3V PROM, 80 ns, PBGA48
2M X 8 FLASH 3V PROM, 120 ns, PBGA48
2M X 8 FLASH 3V PROM, 90 ns, PBGA48
|
AMIC Technology, Corp.
ADVANCED MICRO DEVICES INC
|
| MBM29LV160BE70TN MBM29LV160BE70TR MBM29LV160BE70PB |
16M (2M X 8/1M X 16) BIT 2M X 8 FLASH 3V PROM, 120 ns, PBGA48
KPT 23C 22#20 1#16 SKT PLUG 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16M (2M X 8/1M X 16) BIT 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Central Semiconductor, Corp.
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
| MSM538022CRS MSM531031BGS-K |
1M X 8 MASK PROM, 100 ns, PDIP42
128K X 8 MASK PROM, 150 ns, PDSO32
|
OKI ELECTRIC INDUSTRY CO LTD
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| GLS37VF040-70-3C-NHE SST37VF020-70-3C-PHE SST37VF0 |
-bit AVR Microcontroller with 8K Bytes In- System Programmable Flash
256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
128K X 8 FLASH 2.7V PROM, 70 ns, PDIP32
|
SILICON STORAGE TECHNOLOGY INC
|
|
