| PART |
Description |
Maker |
| HGTG30N120CN HGTG30N120D2 |
30A/ 1200V N-Channel IGBT
30A, 1200V N-Channel IGBT
75A 1200V NPT Series N-Channel IGBT
|
INTERSIL[Intersil Corporation]
http://
|
| APT5017BVR |
POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT1201R6 APT1201R6B APT1201R6BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 8A 1.600 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT12080LVR |
POWER MOS V 1200V 16A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT12080JVR |
POWER MOS V 1200V 15A 0.800 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
|
ADPOW[Advanced Power Technology]
|
| FGA30N120FTD FGA30N120FTDTU |
1200V, 30A Trench IGBT
|
Fairchild Semiconductor
|
| RURP30120 FN3397 |
From old datasheet system
30A, 1200V Ultrafast Diode
|
INTERSIL[Intersil Corporation]
|
| APT12067B2LL APT12067LLL |
POWER MOS 7 1200V 18A 0.670 Ohm
|
Advanced Power Technology
|
| STGW30NC120HD STGW30NC120HD_07 GW30NC120HD STGW30N |
N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STB30N10 6216 |
From old datasheet system
N - CHANNEL 100V - 0.06ohm - 30A - D2PAK POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
