| PART |
Description |
Maker |
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
| MB814260-70 MB814260-60 |
CMOS 256K ×16 BIT
FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM)
CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速页面存取模式动态RAM) 的CMOS 256K × 16位快速页面模式的动态随机存储器（的CMOS 256K × 16位快速页面存取模式动态内存）
CMOS 256K ?16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
Fujitsu, Ltd.
|
| V53C104F V53C104FP60L V53C104FP70 V53C104FK60 V53C |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
http://
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
|
| V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| TC514900AZL-70 TC514260BZLL-70 TC514800AZL-80 TC51 |
512K X 9 FAST PAGE DRAM, 70 ns, PZIP28 ZIP-28
256K X 16 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
512K X 8 FAST PAGE DRAM, 80 ns, PZIP28 ZIP-28
512K X 8 FAST PAGE DRAM, 70 ns, PZIP28 ZIP-28
256K X 18 FAST PAGE DRAM, 80 ns, PZIP40 ZIP-40
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
|
SIEMENS AG
|
| HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| 27C2000 MX27C2000 MX27C2000MC-10 MX27C2000MC-12 MX |
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 55 ns, PDSO32
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 70 ns, PDIP32
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 70 ns, PQCC32
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 90 ns, PQCC32
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 55 ns, PDIP32
Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 85 256K X 8 OTPROM, 90 ns, PDIP32
Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 85 256K X 8 OTPROM, 45 ns, PDIP32
Single Output LDO, 3.0A, Fixed(1.8V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 85
Single Output LDO, 3.0A, Fixed(3.3V), Fast Transient Response, Reverse Current Protection 5-DDPAK/TO-263 -40 to 85
|
MACRONIX INTERNATIONAL CO LTD
PROM
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| MCM54170BZ70 |
256K X 16 FAST PAGE DRAM, 70 ns, PZIP40
|
MOTOROLA INC
|
| V53C104HP45 |
256K X 4 FAST PAGE DRAM, 45 ns, PDIP20
|
MOSEL-VITELIC
|
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