| PART |
Description |
Maker |
| NESG2021M16-T3-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Micro Devices Corporation
|
| NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR 邻舍npn型硅锗高频晶体管
|
Duracell
California Eastern Laboratories, Inc.
|
| RQL1001JLTL-E RQL1001JLAQH |
SiGe MMIC High Frequency Low Noise Amplifier
|
http://
RENESAS[Renesas Electronics Corporation]
|
| HA31006ANP HA31006ANPTL-E |
SiGe MMIC High Frequency Low Noise Amplifier
|
Renesas Electronics Corporation
|
| HSG2005 HSG2005TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| HSG2002 HSG2002TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| BFP750-15 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies A...
|
| NESG210719-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| NESG204619-T1-A NESG204619 NESG204619-A |
NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
CEL[California Eastern Labs]
|
| 15GN01NA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
