| PART |
Description |
Maker |
| 1N6268A 1N6268ARL4 1N6270ARL4 1N6269A 1.5KE220ARL4 |
Zener 7.5V 1500W 5%
Zener 9.1V 1500W 5%
Zener 8.2V 1500W 5%
1500 Watt Mosorb™ Zener Transient Voltage Suppressors
Zener 20V 1500W 5%
Zener 6.8V 1500W 5%
Zener 27V 1500W 5%
Zener 130V 1500W 5%
Zener 12V 1500W 5%
Zener 56V 1500W 5%
Zener 33V 1500W 5%
Zener 150V 1500W 5%
Zener 51V 1500W 5%
Zener 91V 1500W 5%
Zener 82V 1500W 5%
Zener 16V 1500W 5%
Zener 18V 1500W 5%
Zener 24V 1500W 5%
Zener 30V 1500W 5%
Zener 36V 1500W 5%
Zener 43V 1500W 5%
Zener 120V 1500W 5%
Zener 68V 1500W 5%
|
ON Semiconductor
|
| BDS11CECC BDS12CECC BDS10SMD-JQR-BR4 |
DIODE TVS 7.0V 600W UNI-DIR SM
DIODE TVS 75V 600W UNIDIR 5% SMB
15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB
|
SEMELAB LTD
|
| SA12A-T SA20CA-T SA10CA-T SA15CA-T SA7V0CA |
TVS UNI-DIR 12V 500W DO-15 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
TVS BI-DIR 20V 500W DO-15 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
TVS BI-DIR 10V 500W DO-15 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
TVS BI-DIR 15V 500W DO-15 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
500W TRANSIENT VOLTAGE SUPPRESSOR
|
Diodes, Inc.
Diodes Incorporated
|
| M312L2920BG0 M312L2920BG0-A2 M312L2920BG0-B0 M312L |
TVS UNIDIRECT 1500W 150V SMC
TVS 1500W 15V UNIDIRECT SMC
DDR SDRAM Registered Module DDR SDRAM的注册模
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| 1N5651B 1N5635B |
Diode TVS Single Uni-Dir 45.4V 1.5KW 2-Pin DO-13 Bulk
Diode TVS Single Uni-Dir 9.72V 1.5KW 2-Pin DO-13 Bulk
|
New Jersey Semiconductors
|
| NX8563LA-AZ NX8563LA509-CD NX8563LAS509-CD NX8563L |
; Leaded Process Compatible:Yes
TVS UNI-DIR 68V 1500W DO-201
TVS BI-DIR 68V 1500W DO-201
3A 100V Schottky Rectifier; Package: Axial Lead 9.50x5.30mm, 25.4x1.20mm Pkg, Lead len/dia; No of Pins: 2; Container: Bulk; Qty per Container: 500
CONVERTER DC-DC 1W 5V/14V SGL
CONVERTER DC-DC 1W 5V/12V SGL
CONVERTER DC-DC 1W 7V/7V DUAL
DIODE ZENER SINGLE 200mW 5.6Vz 20mA-Izt 0.02504 0.5uA-Ir 2.5 SOD-323 3K/REEL
NECs DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
MILITARY BATTERY RoHS Compliant: NA 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
DIODE ZENER SINGLE 500mW 5.6Vz 20mA-Izt 0.02504 0.5uA-Ir 2.5 SOD-123 3K/REEL 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
CONVERTER DC-DC 1W 5V/5V DUAL 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
NECs DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块2.5 GB /秒，110公里240公里REACH的DWDM城域和有线电视领域的应用
|
California Eastern Laboratories, Inc.
|
| BDA224P BDA218P BDA234P BDA236P |
TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:45V; Breakdown Voltage, Vbr:50V; Peak Pulse Power PPK @ 10x1000uS:500W; Package
DIODE TVS 33V 500W UNI-DIR
DIODE TVS 6.0V 500W BI-DIR
TVS Diode; TVS Polarization:Bidirectional; Stand-Off Voltage, VRWM:6.5V; Breakdown Voltage, Vbr:7.22V; Peak Pulse Power PPK @ 10x1000uS:500W; Package/Case:DO-204AC; Leaded Process Compatible:Yes 500毫升塑料BECHERGLAS
|
Panasonic, Corp.
|
| NX8503CG-CC NX8503BG-CC NX8503CG NX8503BG |
TVS BIDIRECT 1500W 14V SMC
NECs 1550 nm InGaAsP MQW DFB LASER DIODE
|
NEC Corp.
NEC[NEC]
http://
|
| TUSD05M2U |
Electro-Static Discharge TUSD05M2U Uni-Direction TVS Diode
|
StarHope
|
