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WS512K48-20G5WX - 512Kx48 SRAM Module(512Kx48静态RAM模块(存取时0ns 512Kx48 SRAM Module(512Kx48静态RAM模块(存取时5ns 512Kx48 SRAM的模块(512Kx48静态内存模块(存取时间25ns的) SRAM MCP SRAM的MCP 512Kx48 SRAM Module(512Kx48静态RAM模块(存取时7ns 512Kx48 SRAM的模块(512Kx48静态内存模块(存取时间17ns))

WS512K48-20G5WX_2504348.PDF Datasheet

 
Part No. WS512K48-20G5WX WS512K48-25G6WX WS512K48-XG4WX WS512K48-17G4WX
Description 512Kx48 SRAM Module(512Kx48静态RAM模块(存取时0ns
512Kx48 SRAM Module(512Kx48静态RAM模块(存取时5ns 512Kx48 SRAM的模块(512Kx48静态内存模块(存取时间25ns的)
SRAM MCP SRAM的MCP
512Kx48 SRAM Module(512Kx48静态RAM模块(存取时7ns 512Kx48 SRAM的模块(512Kx48静态内存模块(存取时间17ns))

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Supertex, Inc.



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 Full text search : 512Kx48 SRAM Module(512Kx48静态RAM模块(存取时0ns 512Kx48 SRAM Module(512Kx48静态RAM模块(存取时5ns 512Kx48 SRAM的模块(512Kx48静态内存模块(存取时间25ns的) SRAM MCP SRAM的MCP 512Kx48 SRAM Module(512Kx48静态RAM模块(存取时7ns 512Kx48 SRAM的模块(512Kx48静态内存模块(存取时间17ns))


 Related Part Number
PART Description Maker
WS512K48-20G5WX WS512K48-25G6WX WS512K48-XG4WX WS5 512Kx48 SRAM Module(512Kx48静态RAM模块(存取时0ns
512Kx48 SRAM Module(512Kx48静态RAM模块(存取时5ns 512Kx48 SRAM的模块(512Kx48静态内存模块(存取时间25ns的)
SRAM MCP SRAM的MCP
512Kx48 SRAM Module(512Kx48静态RAM模块(存取时7ns 512Kx48 SRAM的模块(512Kx48静态内存模块(存取时间17ns))
Supertex, Inc.
HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
GS816033T-166I GS816019T-133 GS816019T-150 GS81601 166MHz 512K x 32 synchronous SRAM
133MHz 1M x 18 synchronous SRAM
150MHz 1M x 18 synchronous SRAM
166MHz 1M x 18 synchronous SRAM
200MHz 1M x 18 synchronous SRAM
225MHz 1M x 18 synchronous SRAM
250MHz 1M x 18 synchronous SRAM
GSI Technology
CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 512K x 36 pipelined SRAM, 167MHz
512K x 36/1M x 18 Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
TRANS DARL PNP 100V 8A TO-220FP 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
512K x 36 pipelined SRAM, 225MHz
Cypress Semiconductor, Corp.
P4C1024-17PC P4C214-17PPC P4C1024-17JC P4C1024-17J 128K X 8 STANDARD SRAM, 17 ns, PDIP32 PLASTIC, DIP-32
16K X 16 CACHE SRAM, 17 ns, PQCC52 PLASTIC, LCC-52
128K X 8 STANDARD SRAM, 17 ns, PDSO32 SOJ-32
64K X 1 STANDARD SRAM, 10 ns, PDIP22
1K X 4 STANDARD SRAM, 10 ns, PDIP18
128K X 8 STANDARD SRAM, 15 ns, PDSO32
Performance Semiconductor, Corp.
Pyramid Semiconductor, Corp.
PERFORMANCE SEMICONDUCTOR CORP
PYRAMID SEMICONDUCTOR CORP
R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR 4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
Renesas Technology / Hitachi Semiconductor
AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT 2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
   2.5V 512K x 32/36 flowthrough burst synchronous SRAM
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
CY7C1350 7C1350 128Kx36 Pipelined SRAM with NoBL Architecture(带NoBL结构28Kx36流水线式 SRAM) 128K × 36至流水线与总线延迟静态存储器体系结构(带总线延迟结构28K × 36至流水线式的SRAM
128Kx36 Pipelined SRAM with NoBL Architecture(B>NoBL结构28Kx36流水线式 SRAM)
From old datasheet system
Cypress Semiconductor Corp.
M48Z2M1Y10 M48Z2M1V-85PL1 M48Z2M1Y-85PL1 M48Z2M1Y- 5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER庐 SRAM
5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER? SRAM
2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36
STMicroelectronics
WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K 128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM(存取时7ns
128Kx8 3.3单片的SRAM28Kx83.3伏,单片静态随机存储器(存取时间为35ns))
128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
128K X 8 STANDARD SRAM, 20 ns, CDFP32
White Electronic Designs Corporation
White Electronic Designs, Corp.
MAR9264C70CD MAR9264C70FB MAR9264C70LB MAR9264C70N 8K X 8 STANDARD SRAM, 65 ns, CDIP28
8K X 8 STANDARD SRAM, 65 ns, CDFP28
8K X 8 STANDARD SRAM, 65 ns, CQCC
8K X 8 STANDARD SRAM, 65 ns, UUC

 
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