| PART |
Description |
Maker |
| BUK437-400A |
(BUK437-400A/B) Power MOS Transistor
|
Philips
|
| 2N6576 |
15 AMPERE NPN DARLINGTON POWER TRAN
|
General Semiconductor
|
| 1D500A-030 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 400V V(BR)CEO | 500A I(C) 晶体管|晶体管电源模块|达林顿| 400V五（巴西）总裁| 500A一c
|
STEGO, Inc.
|
| IRKT500-16 IRKH500-08 IRKH500-12 IRKH500-14 IRKH50 |
1600V 500A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a Super MAGN-A-Pak package
1200V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
1400V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
800V 500A Doubler Circuit Positive Phase Control Thyristor/Thyristor in a Super MAGN-A-Pak package
800V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
800V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
SUPER MAGN-A-pak Power Modules
1200V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
1600V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
1400V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
1600V 500A Doubler Circuit Positive Phase Control Thyristor/Diode in a Super MAGN-A-Pak package
|
IRF[International Rectifier]
|
| OP793 OP798 |
NPN Pho to tran sis tor with Base- Emitter Resistor
|
OPTEK Technologies
|
| NESG3031M05 NESG3031M05-T1 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp.
NEC[NEC]
|
| CD9012 CD9012J CD9012D CD9012E CD9012F CD9012G CD9 |
0.625W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 278 - 465 hFE
0.625W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 118 - 305 hFE
0.625W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 135 hFE
0.625W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 465 hFE
PNP SILICON PLANAR TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| NESG3031M14NBSP NESG3031M14-T3 NESG3031M14 |
From old datasheet system
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC[NEC]
|
| APT6045CVR APT5024BVFR |
POWER MOS V 600V 11.8A 0.450 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10086BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 13A 0.860 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT6025BVR |
POWER MOS V 600V 25A 0.250 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
