| PART |
Description |
Maker |
| V53C16258HK60 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Murata Manufacturing Co., Ltd.
|
| HM514265DLJ-5 HM514265DLJ-7 HM514265DJ-6R HM514265 |
x16 EDO Page Mode DRAM
Plastic internal molding, Noise prevention, Small and lightweight interface; HRS No: 112-0076-0 71; Contact Mating Area Plating: Tin x16 EDO公司页面模式的DRAM
|
Cinch Connectors
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40
DRAM / FAST PAGE MODE TYPE
262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD
OKI electronic componets
|
| AS4LC4M4E0 AS4LC4M4E1 AS4LC4M4E0-50JC AS4LC4M4E0-6 |
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
4M x 4 CMOS DRAM (EDO) Family
|
Integrated Silicon Solution, Inc.
Alliance Semiconductor
|
| IBM0117805MT3-70 IBM0117805T3-6R IBM0117805BT3-70 |
x8 EDO Page Mode DRAM
2M*8 11/10 EDO DRAM 20081/ 10动态随机存取存储器
|
IBM Microeletronics
International Business Machines, Corp.
|
| MSC23V47257TA-XXBS18 MSC23V47257SA-XXBS18 MSC23V47 |
4,194,304-Word ′ 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
4194304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
4,194,304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
4,194,304-Word ? 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
4,194,304-Word 72-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO 4194304词?72位DRAM模块：快速页面模式型与江
|
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
|
| HYB314405BJL-70 HYB314405BJL-60 HYB314405BJL-50 HY |
1M x 4 Bit EDO DRAM 3.3 V 50 ns
1M x 4 Bit EDO DRAM 3.3 V 60 ns
-1M x 4-Bit Dynamic RAM
1M x 4 Bit EDO DRAM 3.3 V 70 ns
1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM
1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM
1M x 16 Bit 1k 5 V 50 ns EDO DRAM
-1M x 16-Bit Dynamic RAM 1k Refresh
1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM
1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| GM71V17400CT-6 GM71V17400CCL |
x4 Fast Page Mode DRAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
|
|
| MT4C16270 |
DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
|
Micron Technology
|
| UPD4217805G5-60-7JD UPD4217805G5-50-7JD UPD4217805 |
x8 EDO Page Mode DRAM
16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO 16位动态随机存储器2m-word8位，江户
|
NEC TOKIN America Inc.
NEC TOKIN, Corp.
|
