PART |
Description |
Maker |
GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
2SC5001 |
Low Vce(sat) Transistor (Strobe flash) (20V, 10A)
|
ROHM[Rohm]
|
2SA1834 |
Low Vce(sat) Transistor (Strobe flash) (-20V, -10A)
|
ROHM[Rohm]
|
GT8G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT20G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
ST95040 ST95040B1TR ST95040B3TR ST95040B6TR ST9504 |
4K serial SPI EEPROM with positive clock strobe 4/2/1 KBITS SERIAL SPI EEPROM WITH POSITIVE CLOCK STROBE (ST950x0) 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe MOSFET, N SOT-23MOSFET, N SOT-23; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SOT-23; Current, Id cont:2.6A; Current, Idm pulse:10A; Power, Pd:0.75W; Resistance, Rds on:0.07R; SMD:1; Current, Id 4K/2K/1K Serial SPI EEPROM with Positive Clock Strobe 4K/2K/1K串行SPI EEPROM,带有正时钟选 SPI Serial EEPROM SPI串行EEPROM 2K serial SPI EEPROM with positive clock strobe
|
ST Microelectronics SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 STMicroelectronics N.V.
|
2SC4684 E000977 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
2SC4685 E000978 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
2SA1327A |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Amplifier Applications
|
TOSHIBA
|
2SC503004 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
GT5G10306 |
STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
AP30G40AEO |
Strobe Flash Applications
|
Advanced Power Electron...
|