| PART |
Description |
Maker |
| IXTY64N055T IXTP64N055T |
N-Channel Enhancement Mode Avalanche Rated
TrenchMV Power MOSFET N-Channel EngancementMode Avalanche Rated
|
IXYS Corporation
|
| IRFAG40 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
|
International Rectifier
|
| SPP08P06P09 SPP08P06PG |
8.8 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
P-Channel Enhancement mode Avalanche rated dv/dt rated
|
Infineon Technologies AG
|
| BUZ104S Q67040-S4007-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| SFF75N10B SFF75N10B1 SFF27N50M SFF27N50Z |
Avalanche Rated N-channel MOSFET
|
Solid States Devices, Inc
Solid States Devices, I...
|
| IXTA300N04T2-7 |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTY1N80P IXTU1N80P IXTA1N80P |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTA160N10T7 |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
| IXTA56N15T IXTP56N15T |
N-Channel Enhancement Mode Avalanche Rated
|
IXYS Corporation
|
