| PART |
Description |
Maker |
| THMY6432G1EG-80 |
32M Word x 64 Bit Synchronous DRAM Module(32Mx 64位同步动态RAM模块)
|
Toshiba Corporation
|
| MC-4532CD646EF-A10 MC-4532CD646EF-A80 MC-4532CD646 |
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
| MC-4532CC726XF-A10 MC-4532CC726XF-A80 MC-4532CC726 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
| UPD23C32000ALGY-XXX-MKH UPD23C32000AL UPD23C32000A |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)
|
NEC[NEC]
|
| MC-4532CC726 MC-4532CC726EF-A10 MC-4532CC726EF-A80 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
| MC-4R64CPE6C-653 MC-4R64CPE6C-745 MC-4R64CPE6C MC- |
Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 16-BIT)
Direct Rambus?/a> DRAM RIMM?/a> Module 64M-BYTE (32M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 64M-BYTE (32M-WORD x 16-BIT)
|
http://
Elpida Memory
|
| MR26V51203L-XXXMBE MR26V51203L MR26V51203L-XXXMB |
32M-Word x 16-Bit or 64M-Word x 8-Bit
|
OKI[OKI electronic componets]
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MB82DP02183D MB82DP02183D-65LWT |
32M Bit (2 M word 】 16 bit) Mobile Phone Application Specific Memory
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MK32VT1632-10YC |
16777216 Word x 32 Bit Synchronous Dynamic RAM Module (2 BANK)(16M字2位同步动态RAM模块)
From old datasheet system
16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
|
OKI SEMICONDUCTOR CO., LTD.
|
| MR27V452D |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
