| PART |
Description |
Maker |
| RT8H042C |
This is tentative specification
|
Isahaya Electronics Corporation
|
| STK621-031 |
CONNECTOR ACCESSORY
TENTATIVE
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| P0340WQLC-T |
Tentative Product Specification
|
AZ Displays
|
| G121X1-L03 |
TFT LCD Tentative Specification
|
AZ Displays
|
| 2SA679 2SA680 |
SILICON PNP EPITAXIAL MESA TRANSISTOR (TENTATIVE)
|
Unknow
|
| 2SD371 |
SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR(TENTATIVE)
|
List of Unclassifed Manufacturers
|
| TAN-325 |
Tentative Data Audio IC Application Circuit Example of 3-V FM Radio Circuit TA2159F
|
TOSHIBA
|
| TC58NS256DC EA10128 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
From old datasheet system
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
Toshiba Semiconductor
|
| HUF76407D3 HUF76407D3S HUF76407D3ST |
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
|
| NIMD6302R2 |
HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET
HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET
|
ONSEMI[ON Semiconductor]
|
