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KBE00F005A-D411 - 512Mb NAND*2 256Mb Mobile SDRAM*2

KBE00F005A-D411_2667381.PDF Datasheet
 Full text search : 512Mb NAND*2 256Mb Mobile SDRAM*2

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PART Description Maker
KBE00G003M-D411 KBE00G003M-D4110 NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
 SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
KBE00F005A-D411 512Mb NAND*2 256Mb Mobile SDRAM*2
 Samsung Electronic
KBE00S003M-D411 KBE00S003M 1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
 SAMSUNG[Samsung semiconductor]
HB54A2569F1 HB54A2569F1-10B HB54A2569F1-A75B HB54A 256MB, 512MB Registered DDR SDRAM DIMM
 Elpida Memory
ESSDC512 ESSDC64 ESSDC128 ESSDC256 64MB/128MB/256MB/512MB Secure Digital Card
 Eorex Corporation
W948D2FBJX5E W948D2FBJX5I W948D2FBJX6E W948D2FBJX6 256Mb Mobile LPDDR
 Winbond
W988D6FB (W988D2FB / W988D6FB) 256Mb Mobile LPSDR
 Winbond
H5MS2562JFR-E3M H5MS2562JFR-J3M H5MS2562JFR-K3M H5 256Mb (16Mx16bit) Mobile DDR SDRAM
 Hynix Semiconductor
EDL5132CBMA-10-E EDL5132CBMA 512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
 ELPIDA[Elpida Memory]
MT48H16M32LF MT48H16M32LFCJ-75 MT48H16M32LFCJ-75IT 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
 MICRON[Micron Technology]
MT48H32M16LFCJ-8L MT48H16M32LFCJ-8LIT MT48H16M32LG 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
 Micron Technology, Inc.
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT 256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
 Toshiba, Corp.
SIEMENS AG
 
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KBE00F005A-D411 Specification KBE00F005A-D411 Control KBE00F005A-D411 pnp KBE00F005A-D411 noise KBE00F005A-D411 Emitter
KBE00F005A-D411 single KBE00F005A-D411 Positive KBE00F005A-D411 adc KBE00F005A-D411 data sheet ic KBE00F005A-D411 Ic on line
 

 

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