PART |
Description |
Maker |
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
ECG340 ECG330 ECG330W ECG331 |
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 500MA I(C) | TO-92VAR TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 15A I(C) | TO-220
|
|
DTL1636 DTL1658 DTL1638 DTL1644 |
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | TO-210AE TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 1A I(C) | TO-66 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 1A I(C) | TO-3 晶体管|晶体管| npn型| 200伏五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-66
|
Shindengen Electric Manufacturing Co., Ltd.
|
MJD31CQ MJD31CQ-13 MJD31CQ-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V 100V NPN HIGH VOLTAGE TRANSISTOR IN TO252
|
Diodes Incorporated
|
FMMT634-15 FMMT634TA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V 100V NPN DARLINGTON TRANSISTOR IN SOT23
|
Diodes Incorporated
|
ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760; TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五(巴西)总裁| 15A条(c)的|园区 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五(巴西)总裁| 300mA的一(c)|
|
NXP Semiconductors N.V.
|
2SD1419DE 2SD1419DD 2SD1419 |
Silicon NPN Transistor TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | SOT-23 Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
|
Hitachi Semiconductor
|
MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五(巴西)总裁|芯片 TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五(巴西)总裁|芯片 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|芯片 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC Central Semiconductor, Corp. Cypress Semiconductor, Corp.
|
2N3292 2N4874 2N3307 2N4252 2N5852 2N4253 2N3293 |
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 50MA I(C) | TO-72 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 50MA I(C) | TO-72 TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 50MA I(C) | TO-92 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | TO-72 晶体管|晶体管|叩| 20V的五(巴西)总裁| 50mA的一(c)|72
|
Integrated Device Technology, Inc.
|
PG1523 PG1520 PG1522 PG1521 PG1500 |
High Voltage 1.5A, 200kHz Step-Down Switching Regulator with 100µA Quiescent Current; Package: TSSOP; No of Pins: 16; Temperature Range: -40 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | TO-3 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | TO-3 TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 20A I(C) | TO-3 晶体管|晶体管|叩| 30V的五(巴西)总裁|甲一(c)|
|
ON Semiconductor
|
D40C4 D45D2 D45D4 D45D6 D40C7 D40K4 D44D5 |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 500MA I(C) | TO-202AC TRANSISTOR | BJT | DARLINGTON | PNP | 50V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 70V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | PNP | 90V V(BR)CEO | 6A I(C) | TO-220AB TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 500MA I(C) | TO-202 TRANSISTOR | BJT | DARLINGTON | NPN | 50V V(BR)CEO | 2A I(C) | TO-202AC TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 6A I(C) | TO-220AB 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 6A条一(c)| TO - 220AB现有
|
Vishay Intertechnology, Inc.
|
NE32740A NE32708 NE32740B NE32702 NE32700 |
TRANSISTOR | BJT | NPN | 50MA I(C) | MACRO-X TRANSISTOR | BJT | NPN | 50MA I(C) | MICRO-X TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | CHIP 晶体管|晶体管|叩| 12V的五(巴西)总裁| 50mA的一(c)|芯片
|
Panasonic, Corp.
|