| PART |
Description |
Maker |
| 2SD1760 2SD1864 2SD1864P 2SD1760Q |
Power Transistor 50V, 3A 功率晶体0VA
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-252 晶体管|晶体管|叩| 50V五（巴西）总裁| 3A条一（c）|52
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | SIP
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SD2537 2SD2171S 2SD2226K 2SD2227S 2SD2351 |
MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A) 中功率晶体管25V的，1.2伏），通用晶体管（50V.15A
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SC4295M 2SC4295MN 2SC4295MP 2SC4295MQ 2SD2279P 2S |
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 200MA I(C) | SIP
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SC-71 晶体管|晶体管|叩| 50V五（巴西）总裁| 200mA的一（c）|律师- 71
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SIP 晶体管|晶体管|叩| 50V五（巴西）总裁| 200mA的一（c）|园区
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 50V五（巴西）总裁| 5A条一（c）|园区
晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|园区
晶体管|晶体管|叩| 50V五（巴西）总裁| 5A条一（c）|律师- 71
5个引#181;带看门狗和手动复位的P监控电路
晶体管|晶体管|叩| 25V的五（巴西）总裁| 50mA的一（c）|园区
晶体管|晶体管|叩| 20V的五（巴西）总裁| 1A条一（c）|律师- 71
晶体管|晶体管|叩| 400V五（巴西）总裁| 100mA的一（c）|律师- 71
晶体管|晶体管|叩| 25V的五（巴西）总裁| 200mA的一（c）|律师- 71
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SIP
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 3A I(C) | SIP
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SC-71
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SIP
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SIP
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SIP
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SC-71
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | SIP
TRANSISTOR|BJT|NPN|400VV(BR)CEO|100MAI(C)|SC-71
|
Power Integrations, Inc.
|
| CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
| CSA1162Y-3E CSA1162 CSA1162GR_G-3F CSA1162GRG-3F C |
0.150W Low Frequency PNP SMD Transistor. 50V Vceo, 0.150A Ic, 200 - 400 hFE. Complementary CSC2712
LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23
晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一c）| SOT - 23封装
|
CDIL[Continental Device India Limited]
|
| 2SB826 2SB826R |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220AB
POWER TRANSISTORS(12A,50V,40W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SD2395 |
Power Transistor (-50V/ -3A)
Power Transistor (-50V -3A)
For Power Amplification (50V, 3A)
|
ROHM[Rohm]
|
| 2SD2351VWT106 2SD2654VWTL 2SD2226KVWT146 2SD2227SW |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-346
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-416
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
ROHM
|
| DDTA114ECA DDTA115ECA DDTA123ECA DDTA124ECA DDTA14 |
CAP .0082UF 50V PPS FILM 1206 5%
PNP PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR 进步党预偏置信号小的SOT - 23表面贴装晶体
CAP .22UF 50V PPS FILM ECH-S
|
DIODES[Diodes Incorporated]
Diodes, Inc.
Diodes Inc.
|
| DTA114YCAHZG |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
Rohm
|
| DTA123YCAHZG DTA123YCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTC113ZCAHZGT116 |
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
