| PART |
Description |
Maker |
| 5962-8851201QEA |
Improved Low-Power, CMOS Analog Switches with Latches 收发
|
Rochester Electronics, LLC
|
| TC7109 TC7109A |
The TC7109A is a 12-bit plus sign,CMOS low-power analog-to-digital converter (ADC).Only eight passive components and a crystal are required to form a complete dual-slope integrating ADC. The improved VOH source current TC7109A has features
|
Microchip
|
| DG407 |
Improved, Dual 8 Channel CMOS Analog Multiplexers(改进型双8通道CMOS模拟多路复用
Improved, Dual 8 Channel CMOS Analog Multiplexers(?硅????8???CMOS妯℃?澶?矾澶????
|
Maxim Integrated Products, Inc.
|
| DG409CY DG408AK DG408C_D DG408CJ DG408CY DG408DJ D |
iMPROVED / 8-cHANNEL/dUAL 4-cHANNEL / cmos aNALOG mULTIPLEXERS
iMPROVED, 8-cHANNEL/dUAL 4-cHANNEL, cmos aNALOG mULTIPLEXERS DUAL 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, UUC18
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
|
| DG201BDY-E3 DG202BDY-E3 DG201BDJ-E3 DG201BDQ-E3 DG |
Improved Quad CMOS Analog Switches
|
Vishay Siliconix
|
| DG442BDY DG441B DG441BDJ DG441BDN DG441BDY DG442B |
Improved Quad SPST CMOS Analog Switches
|
VISAY[Vishay Siliconix]
|
| AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM
2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM)
2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM
2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation
SEMICOA[Semicoa Semiconductor]
|
| CA3130 CA3130A |
Op Amp, BiMOS, MOSFET Inputs, CMOS Outputs, 15MHz, Improved Input Characteristics
|
Intersil
|
| IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
128K x 8 Ultra Low Power and Low VCC SRAM
From old datasheet system
55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM（带单片使能
2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable
2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor Corporation
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| KM68V1000BLE_LE-L KM68U1000BLE_LE-L KM68U1000BLG-1 |
CONNECTOR ACCESSORY 连接器附
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM 128K的8位低功耗和低电压的CMOS Statinc内存
(KM68V1000B / KM68U1000B) 128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
