| PART |
Description |
Maker |
| K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M32L163251 M32L1632512A M32L1632512A-5Q M32L163251 |
256K x 32 Bit x 2 Banks Synchronous Graphic RAM
|
N.A.
ETC
|
| K4R271669B-NCK7 K4R271669B-MCK7 K4R271669B-MCK8 K4 |
256K x 16/18 bit x 32s banks Direct RDRAMTM 256 × 16/18位32秒银行直接RDRAMTM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4R441869A K4R271669A-NMCG6 K4R271669A-NMCK7 K4R27 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256 × 16/18位2 * 16属银行直接RDRAMTM
|
Sunon, Inc.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM4132G512 |
256K x 32Bit x 2 Banks Synchronous Graphic RAM(256K x 32x 2组同步图RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 29F002B-90 29F002T-12 29F002T-55 29F002T-90 29F002 |
2M-BIT [256K x 8] CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存
2M-BIT [256K x 8] CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PDIP32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| KM41256AJ-12 KM41257AJ-12 KM41256AJ-10 KM41257AJ-1 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode 256K × 1位动态随机存储器与页/半字节模
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| TC55VD836FF-150 TC55VD836FF-133 TC55VD836FF-143 |
256K Word x 36 Bit Synchronous No-turnround Static RAM(256K 字x36位同步无转向静RAM) 256K字36位同步无具体时间的静态RAM56K字x36位同步无转向静态内存）
|
Toshiba Corporation
Toshiba, Corp.
|
| KM641003B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM641003A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 79LV0832RPQK-20 79LV0832RT1QK-25 79LV0832RT2QK-20 |
CB 6C 6#16 SKT RECP WALL
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 250 ns, QFP96
8 Megabit (256K x 32-Bit) Low Voltage EEPROM MCM 256K X 32 EEPROM 3V, 200 ns, QFP96
|
Maxwell Technologies, Inc
|
| MX29F022NBPC-55 MX29F022NTPC-55 MX29F022BPC-55 MX2 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDSO32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDIP32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PQCC32
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
