| PART |
Description |
Maker |
| HY29DS323 HY29DS322 HY29DS323BF-10 HY29DS322BF-12 |
EEPROM EEPROM
32 MEGABIT (4M X 8/2M X16) SUPER-LOW VOLTAGE, DUAL BANK, SIMULTANEOUS READ/WRITE, FLASH MEMORY
|
Hynix Semiconductor, Inc.
|
| MB84VD22193EC MB84VD22193EC-90 MB84VD22193EC-90-PB |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的（x 8/x16）闪
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA73
Trimmer; Series:3262; Track Resistance:5kohm; Resistance Tolerance: 10%; Power Rating:0.25W; Operating Temperature Range:-65 C to C; Resistor Element Material:Cermet; Temperature Coefficient:100 ppm; Adjustment Type:Top RoHS Compliant: Yes
CONN, M HEADER ST 1X2 .230
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| LH28F160S3HB-L10 LH28F160S3R-L10 LH28F160S3HD-L10 |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Sharp, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| TMS28F210-12C3DBWL TMS28F210-12C3DBWQ TMS28F210-12 |
x16 Flash EEPROM x16闪存EEPROM
|
HIROSE ELECTRIC Co., Ltd.
|
| TMS28F210-10C3NE TMS28F210-17C4NL4 TMS28F210-12C4F |
x16 Flash EEPROM x16闪存EEPROM
|
Toshiba, Corp.
Piher Sensors ?Controls SA
|
| W29C101Q-12 W29C101Q-90 W29C101Q-90B W29C101Q-12B |
x16 Flash EEPROM x16闪存EEPROM
|
TE Connectivity, Ltd.
Winbond Electronics, Corp.
|
| LH28F800SGR-L100 LH28F800SGN-L100 LH28F800SGB-L100 |
x16 Flash EEPROM x16闪存EEPROM
|
TE Connectivity, Ltd.
|
| LH28F400SUT-LC15 LH28F400SUN-LC15 |
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Sharp, Corp.
|
| DPZ128X16IHY-25B DPZ128X16IHY-25C DPZ128X16IHY-25I |
x16 Flash EEPROM Module x16闪存EEPROM模块
|
Glenair, Inc.
Air Cost Control
Vicor, Corp.
TE Connectivity, Ltd.
HIROSE ELECTRIC Co., Ltd.
L-com, Inc.
|
| HYCFL001-150 |
x8/x16 Flash EEPROM Module x8/x16闪存EEPROM模块
|
Lumex, Inc.
|
| AT49F1024 AT49F1024-50VC |
x16 Flash EEPROM
From old datasheet system
1-megabit (64K x 16) 5-volt Only Flash Memory
1M bit, 64K x 16, 5-Volt Read and 5-Volt Write Flash
|
Atmel Corp
|
| M39832 M39832NE 6468 M39832-B12WNE1T M39832-B12WNE |
Single Chip 8 Mbit (1Mb x8 or 512Kb x16) Flash and 256 Kbit Parallel EEPROM Memory
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
