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K1B3216BDD - 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM

K1B3216BDD_2746496.PDF Datasheet


 Full text search : 2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM


 Related Part Number
PART Description Maker
K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
SAMSUNG[Samsung semiconductor]
A63P0636E-4.2F A63P0636 A63P0636E A63P0636E-2.6 A6 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 100万米6位同步高的Burst计数器和流水线数据输出高速SRAM
1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 100万米36位同步高的Burst计数器和流水线数据输出高速SRAM
DIODE ZENER SINGLE 500mW 6Vz 20mA-Izt 0.05 5uA-Ir 3.5Vr DO35-GLASS 5K/REEL
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
K7A803601A K7A801801A 256Kx36Bit Synchronous Pipelined Burst SRAM Data Sheet
512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
Samsung Electronic
AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
WED2ZL361MV50BC WED2ZL361MV38BC WED2ZL361MV42BC WE 1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,5.0纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.8纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,4.2纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.5纳秒同步脉冲流水线静态随机存储器(无总线等待时间))
Vicor, Corp.
GS820322T-138 GS82032T-66 GS82032Q-150 GS82032Q-5I 66MHz 18ns 64K x 32 2M synchronous burst SRAM
PROGRAMMER UNIVERSAL 40-PIN
64K x 32 / 2M Synchronous Burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K的32 200万同步突发静态存储器
PROGRAMMER UNIV W/USB 48-PIN 64K的32 200万同步突发静态存储器
.56UF/100VDC METAL POLY CAP 64K的32 200万同步突发静态存储器
64K X 32 CACHE SRAM, 11 ns, PQFP100
GSI Technology
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
KM732V696 KM732V696L 64Kx32-Bit Synchronous Pipelined Burst SRAM
Samsung Semiconductor
KM736V687A 64Kx36-Bit Synchronous Burst SRAM(64Kx36位同步脉静RAM)
SAMSUNG SEMICONDUCTOR CO. LTD.
K7A201800B 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
Samsung semiconductor
K7A403601M 128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet
Samsung Electronic
K7A401800A 256Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
Samsung Electronic
 
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