| PART |
Description |
Maker |
| 2SJ109 E001254 |
P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS)
P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER, DIFFERENTIAL AMPLIFIER APPLICATIONS)
LOW NOISE AUDIO AMPLIFIER APPLICATIONS DIFFERENTIAL AMPLIFIER APPLICATIONS
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2458 2SC2458L |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications Low Noise Audio Amplifier Applications
TRANSISTOR (AUDIO AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC1815L 2SC1815 |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE, LOW NOISE AMPLIFIER APPLICATIONS)
Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| SSM2134 |
Low Noise Audio Operational Amplifier
|
PMI
|
| 2SK170-GR |
Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| 2SK17007 2SK170 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK36907 2SK369 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK170 K170 |
FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK37107 2SK371 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SK11707 2SK117 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
