| PART |
Description |
Maker |
| ATF-25170 |
0.5-10 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| AMMC-5023 |
AMMC-5023 · 23 GHz Low Noise Amplifier
23 GHz Low Noise Amplifier (21.2-26.5 GHz)
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| AA038N1-99 |
261 GHz Low Noise Amplifier
26-41 GHz Low Noise Amplifier
GT 4C 4#4 PIN PLUG
|
Alpha Industries Inc
ALPHA[Alpha Industries]
Alpha Industries, Inc.
|
| ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ
0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
| PE3240 PE3240EK 3240-11 3240-12 3240-00 |
2.2 GHz UltraCMOS⑩ Integer-N PLL for Low Phase Noise Applications
2.2 GHz UltraCMOSInteger-N PLL for Low Phase Noise Applications
2.2 GHz UltraCMOS Integer-N PLL for Low Phase Noise Applications
|
PEREGRINE[Peregrine Semiconductor Corp.]
|
| TLT-8-2014 TLT-8-2013 |
Temperature Compensated Low Noise Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TMT-4-2002 |
Temperature Compensated Low Noise Amplifier 2 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLT-13-6015 TLT-13-6014 |
Temperature Compensated Low Noise Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TLA-18-6007 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated.
|
| TLA-13-6012 |
Low Noise Amplifier 6 GHz - 13 GHz
|
Teledyne Technologies Incorporated.
|
