Part Number Hot Search : 
90130 TMU3100 B160005 4HC40 MOP06 355402 LXP1010 26N60
Product Description
Full Text Search

CM50E3Y24E - TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 50A I(C)

CM50E3Y24E_2769267.PDF Datasheet


 Full text search : TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 50A I(C)
 Product Description search : TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 50A I(C)


 Related Part Number
PART Description Maker
FZ800R33KF1 FS150R12KF4 FD400R12KF4 TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
Infineon Technologies AG
MG800J2YS50A IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
Toshiba Semiconductor
VDI125-12S4 VII125-12S4 VID125-12S4 TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 125A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展| 125A条一(c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 125A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 125A条一(c
IXYS, Corp.
BSM300GB120DLC TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,625A I(C)
Eupec
PS21865 TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,600V V(BR)CES,20A I(C)
Mitsubishi Electric & Electronics USA
IRGTI050U06 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C)

IRGRDN400K06 TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 520A I(C) 晶体管| IGBT功率模块|独立| 600V的五(巴西)国际消费电子展| 520A一(c
Diodes, Inc.
MP4015 Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive. Inductive Load Switching.
TOSHIBA Power Transistor Module
TOSHIBA[Toshiba Semiconductor]
CM200DY24E TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 200A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 200安培我(丙)
Vishay Intertechnology, Inc.
CM100DY12H TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 600V的五(巴西)国际消费电子展| 100号A一(c
Mitsubishi Electric, Corp.
2MBI100J120 TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一c
Samsung Semiconductor Co., Ltd.
IEF21KA1 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 15A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1KV交五(巴西)国际消费电子展|5A一(c
TE Connectivity, Ltd.
 
 Related keyword From Full Text Search System
CM50E3Y24E temperature CM50E3Y24E Microcontroller CM50E3Y24E panasonic CM50E3Y24E speech voice CM50E3Y24E number
CM50E3Y24E LPE model CM50E3Y24E 什么封装 CM50E3Y24E baumer ivo gxmmw CM50E3Y24E purpose CM50E3Y24E Memory
 

 

Price & Availability of CM50E3Y24E

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
2.0181169509888