PART |
Description |
Maker |
PTF210101M |
High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
PTF181301 PTF181301A |
LDMOS RF Power Field Effect Transistor 130 W, 1805-1880 MHz LDMOS射频功率场效应晶体管130瓦,1805年至1880年兆 LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz
|
INFINEON[Infineon Technologies AG]
|
MAPLST0822-002PP |
RF Power Field Effect Transistor LDMOS, 800-2200 MHz, 2W, 28V
|
Tyco Electronics
|
MAPLST0810-030CF MAPLST0810-030CF-05-2004 |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
|
MACOM[Tyco Electronics]
|
MAPLST0810-045CF |
RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
|
MACOM[Tyco Electronics]
|
MAPLST1617-030CF |
RF Power Field Effect Transistor LDMOS, 1600 - 1700 MHz, 30W, 28V
|
Tyco Electronics
|
0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦,28V的,1 GHz的LDMOS的场效应 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
IFS75S12N3T4B11 |
High Power RF LDMOS FETs
|
Infineon Technologies AG
|
PXAC180602MD-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|