| PART |
Description |
Maker |
| JHV3680 JHV36 JHV3612 JHV3616 JHV3620 JHV3624 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 54; IFSM (A): 1200; Vrwm (V): 28000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
MICROSEMI[Microsemi Corporation]
|
| HVR-1X-40B SHV-20 SHV-16 UX-F0B SHV-02 SHV-03 SHV- |
9kV,High-Voltage Rectifier Diodes(9kV,高压整流二极 0.35 A, SILICON, SIGNAL DIODE
High-Voltage Rectifier Diodes 0.002 A, 4.5 V, SILICON, SIGNAL DIODE
Ultra low profile, Two-piece, Discrete wire, FPC, and fine coaxial cable connectors; HRS No: 685-0018-5 05; No. of Positions: 14; Operating Temperature Range (degrees C): -35 to 85; General Description: Accessory; Ground plate for FPC type
High-Voltage Rectifier Diodes
|
Sanken Electric Co., Ltd.
Sanken Electric Co.,Ltd.
SANKEN[Sanken electric]
http://
|
| JHV2180 JHV21 JHV2112 JHV2116 JHV2120 JHV2124 JHV2 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; IFSM (A): 250; Vrwm (V): 24000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; IFSM (A): 250; Vrwm (V): 64000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; IFSM (A): 250; Vrwm (V): 52000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; IFSM (A): 250; Vrwm (V): 28000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; IFSM (A): 250; Vrwm (V): 76000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; IFSM (A): 250; Vrwm (V): 68000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| JHV3780 JHV37 JHV3712 JHV3716 JHV3720 JHV3724 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 57; IFSM (A): 1500; Vrwm (V): 60000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 57; IFSM (A): 1500; Vrwm (V): 36000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE
HIGH VOLTAGE RECTIFIER ASSEMBLY
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| EFM202L EFM201L EFM203L EFM204L EFM205L EFM206L EF |
2 A, 150 V, SILICON, RECTIFIER DIODE
2 A, 300 V, SILICON, RECTIFIER DIODE
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 2.0 Ampere
2 A, 100 V, SILICON, RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
| B1100LB B1100LB-7 |
2 A, 100 V, SILICON, RECTIFIER DIODE
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
|
Diodes Incorporated
|
| SDHD7.5K SDHP7.5K SDHP15K SDHD15K SDHN7.5K |
STANDARD RECOVERY HIGH VOLTAGE DOUBLER AND CENTER TAPS
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压7500V，温5℃时平均整流电流0.4A,高密高电标准恢复倍增整流
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温5℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
High Density,High Voltage,Standard Recovery Center Tap Rectifier(反向电压7500V，温25℃时平均整流电流0.8A,高密高电标准恢复正中心抽头整流器)
0.8 A, 7500 V, 2 ELEMENT, SILICON, SIGNAL DIODE
High Density,High Voltage,Standard Recovery Doubler Rectifier(反向电压15000V，温25℃时平均整流电流0.4A,高密高电标准恢复倍增整流 高密度，高电压，标准恢复倍流整流（反向电5000V，温25℃时平均整流电流0.4A，高密度，高电压，标准恢复倍增整流器）
|
Semtech Corporation
Semtech, Corp.
|
| STTH16L06GG-TR STTH16L06C STTH16L06CFP STTH16L06CG |
10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| VB20100SG-E3-8W V20100SG-E3-4W VF20100SG VF20100SG |
High-Voltage Trench MOS Barrier Schottky Rectifier
20 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| JHV21HI2 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 22; Vrwm (V): 12000; IR (µA): 10; 22 A, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
| V30100SG-M3-4W V30100SGHM3-4W VI30100SG-M3/4W |
High-Voltage Trench MOS Barrier Schottky Rectifier
30 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| RBU801M RBU801M10 RBU804M RBU805M RBU806M RBU801M- |
8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes
8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
