| PART |
Description |
Maker |
| 2SD2537 2SD2171S 2SD2226K 2SD2227S 2SD2351 |
MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A) 中功率晶体管25V的，1.2伏），通用晶体管（50V.15A
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| 2SC4295M 2SC4295MN 2SC4295MP 2SC4295MQ 2SD2279P 2S |
TRANSISTOR | BJT | PNP | 600V V(BR)CEO | 200MA I(C) | SIP
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SC-71 晶体管|晶体管|叩| 50V五（巴西）总裁| 200mA的一（c）|律师- 71
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SIP 晶体管|晶体管|叩| 50V五（巴西）总裁| 200mA的一（c）|园区
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | SIP 晶体管|晶体管|进步党| 50V五（巴西）总裁| 5A条一（c）|园区
晶体管|晶体管|进步党| 50V五（巴西）总裁| 150毫安一（c）|园区
晶体管|晶体管|叩| 50V五（巴西）总裁| 5A条一（c）|律师- 71
5个引#181;带看门狗和手动复位的P监控电路
晶体管|晶体管|叩| 25V的五（巴西）总裁| 50mA的一（c）|园区
晶体管|晶体管|叩| 20V的五（巴西）总裁| 1A条一（c）|律师- 71
晶体管|晶体管|叩| 400V五（巴西）总裁| 100mA的一（c）|律师- 71
晶体管|晶体管|叩| 25V的五（巴西）总裁| 200mA的一（c）|律师- 71
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SIP
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 3A I(C) | SIP
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SC-71
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | SIP
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SIP
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | SIP
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SC-71
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | SIP
TRANSISTOR|BJT|NPN|400VV(BR)CEO|100MAI(C)|SC-71
|
Power Integrations, Inc.
|
| CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
| RA110C RC110C RA113S RC113S RA103S RC103S RA114S R |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-236
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|2VAR
|
Amphenol, Corp.
|
| IRF7103Q IRF7103QTR IRF7103QN |
N-channel power MOSFET for anti-lock braking systems applications, 50V, 3A
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 50V V(BR)DSS | 3A I(D) | SO
Power MOSFET(Vdss=50V)
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
50V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| 2SB826 2SB826R |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220AB
POWER TRANSISTORS(12A,50V,40W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 4608H-701-332/472 4608H-701-332/272 4608H-701-332/ |
RC NETWORK, BUSSED, 3300ohm, 50V, 0.0047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.0027uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.000047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 3300ohm, 50V, 0.00047uF, THROUGH HOLE MOUNT, SIP-8 SIP
RC NETWORK, BUSSED, 100000ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 82ohm, 50V, 0.00012uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 82ohm, 50V, 0.00022uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 390000ohm, 50V, 0.027uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 1500ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 10000ohm, 50V, 0.015uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 330ohm, 50V, 0.0001uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 100ohm, 50V, 0.0047uF, THROUGH HOLE MOUNT, SIP-10
RC NETWORK, BUSSED, 33ohm, 50V, 0.000047uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 1200ohm, 50V, 0.047uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 33ohm, 50V, 0.00047uF, THROUGH HOLE MOUNT, SIP-9
Thick Film Resistor Network; Series:4600X; Resistance:22ohm; Resistance Tolerance: 5, - 20%; Power Rating:1.13W; Operating Temperature Range:-55 C to ? C; Resistor Element Material:Thick Film; Voltage Rating:100VDC RoHS Compliant: No
RC NETWORK, BUSSED, 100000ohm, 50V, 0.0039uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 33000ohm, 50V, 0.001uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 15000ohm, 50V, 0.00068uF, THROUGH HOLE MOUNT, SIP-9
RC NETWORK, BUSSED, 15000ohm, 50V, 0.00033uF, THROUGH HOLE MOUNT, SIP-8
RC NETWORK, BUSSED, 100000ohm, 50V, 0.033uF, THROUGH HOLE MOUNT, SIP-9
RC NETWORK, BUSSED, 330ohm, 50V, 0.00033uF, THROUGH HOLE MOUNT, SIP-9
|
Bourns, Inc.
BOURNS INC
|
| CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
| DTA123YCAHZG DTA123YCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTC113ZCAHZGT116 |
NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
| DTA113ZCAHZG |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
|
