PART |
Description |
Maker |
HMC334LP4 HMC334LP4E |
SiGe WIDEBAND DOWNCONVERTER, 0.8 - 2.7 GHz
|
Hittite Microwave Corporation
|
TL101HH11 |
Wideband Direct Mount antenna
|
Taoglas antenna solutio...
|
HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM 64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
MAX2642 MAX2642EXT-T MAX2642-MAX2643 MAX2643 MAX26 |
900MHz SiGe, High-Variable IP3, Low-Noise Amplifier From old datasheet system 900MHz SiGe, High IP3, Low-Noise Amplifiers 900MHz SiGe / High IP3 / Low-Noise Amplifiers Hex inverters 14-SOIC 0 to 70
|
MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] Maixm Maxim Integrated Products, Inc.
|
AN26102A AN26102A-14 |
SiGe Linear Power Amplifier for 2.4 GHz Band Applications SiGe Bi-CMOS Monolithic IC, WLCSP PKG Power Amplifi er
|
Panasonic Battery Group
|
T0980 T0980-TJQ T0980-TJS |
SiGe Transmit/ Receive Frontend IC Sige Transmit/receive Front-end ic
|
ATMEL Corporation
|
MAX2320 MAX2321 MAX2322 MAX2324 MAX2325 MAX2326 MA |
Adjustable.High-Linearity.SiGe.Dual-Band.LNA/Mixer ICs Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs 可调、高线性度、SiGe、双频段、LNA/混频器IC Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs RF/MICROWAVE DOWN CONVERTER Adjustable, High-Linearity, SiGe, Dual-Band, LNA/Mixer ICs
|
Maxim Integrated Products, Inc. MAXIM INTEGRATED PRODUCTS INC
|
CY2212ZC-2 CY2212ZC-2T CY2212 CY2212ZXC-2T |
Direct RambusT 82; Clock Generator (Lite)& gt;< p> Features Direct Rambus⑩ Clock Generator (Lite) Direct Rambus Clock Generator (Lite)
|
Cypress Semiconductor
|
K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
PP0800EB PP1500EA |
Direct ProTek Replacement:PP0800EB 直接太克替代:PP0800EB Direct ProTek Replacement:PP1500EA 20 A, SILICON SURGE PROTECTOR, TO-92
|
Air Cost Control PROTEK DEVICES
|
HS-2600RH 5962D9567101VPC HS7B-2600RH-Q HS7-2600RH |
Radiation Hardened Wideband/ High Impedance Operational Amplifier Radiation Hardened Wideband, High
Impedance Operational Amplifier(抗辐射宽带、高阻抗运算放大 CONNECTOR ACCESSORY Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 12 MHz BAND WIDTH, CDIP8 Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, CDIP8
|
Intersil Corporation Intersil, Corp. http://
|
MC-4R256FKE8S-840 |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT) 128M X 18 DIRECT RAMBUS DRAM MODULE, DMA160
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|