| PART |
Description |
Maker |
| NR3316TM |
RECEIVER PIN-PD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS
|
Renesas Electronics Corporation
|
| LTM9003 |
12-Bit Digital Pre-Distortion Receiver Subsystem
|
Linear Technology Corporation
|
| NR3316TM |
PIN-PD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS
|
California Eastern Labs
|
| NR3312TX-AZ NR3312 NR3312TF-AZ NR3312TP-AZ NR3312T |
InGaAs PIN-PD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS
|
CEL[California Eastern Labs]
|
| NR3315TA-CC |
InGaAs PIN-PD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS
|
California Eastern Labs
|
| NR3314TU |
InGaAs PIN-PD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS
|
Renesas Electronics Corporation
|
| LTM9001IV-GAPBF |
16-Bit, 25Msps IF/Baseband Receiver Subsystem; Package: 81-LGA; Temperature Range: –40°C to 85°C SPECIALTY ANALOG CIRCUIT, PBGA81
|
Linear Technology, Corp.
|
| EMRS-1800TR |
±15kV ESD Protected, 3V to 5.5V, 1 Microamp, 250Kbps, RS-232 Transmitter/Receiver; Temperature Range: -40°C to 85°C; Package: 20-SSOP T&R
±15kV ESD Protected, 3V to 5.5V, 1 Microamp, 250Kbps, RS-232 Transmitter/Receiver; Temperature Range: 0°C to 70°C; Package: 18-SOIC T&R
±15kV ESD Protected, 3V to 5.5V, 1 Microamp, 250Kbps, RS-232 Transmitter/Receiver; Temperature Range: 0°C to 70°C; Package: 18-SOIC T&R E系列表面贴装混合6002300兆赫
1600 MHz - 2300 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 9.5 dB CONVERSION LOSS-MAX
|
Analog Devices, Inc.
|
| S1A0291X01-A0B0 DS_S1A0291X01 S1A0291X01 DSS1A0291 |
PB/REC PRE AMP FOR 2 DECK
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| LA4575 LA4575M |
2-Channel Pre Power 3V Headphone Amp
|
SANYO[Sanyo Semicon Device]
|
