| PART |
Description |
Maker |
| GS74104J-12 GS74104J-10 GS74104J-10I GS74104J-12I |
10ns 1M x 4 4Mb asynchronous SRAM
8ns 1M x 4 4Mb asynchronous SRAM
12ns 1M x 4 4Mb asynchronous SRAM
|
http://
GSI Technology
|
| M68AF127BL55MC6 M68AF127BMC M68AF127B M68AF127BB M |
1Mbit 128K x8, 5V Asynchronous SRAM 1Mbit28K的8V的异步SRAM
AML22 Series, Electronic Control Pushbutton, Square, Standard Bezel, Lighted, 1 LED, DPDT, Momentary Action, Snap in panel mount
1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| GS71116J-12I GS71116TP-12I GS71116TP-15I GS71116TP |
15ns 64K x 16 1Mb asynchronous SRAM
10ns 64K x 16 1Mb asynchronous SRAM
12ns 64K x 16 1Mb asynchronous SRAM
|
List of Unclassifed Manufacturers
ETC[ETC]
GSI Technology
|
| GS74116U-8 GS74116J-10I GS74116TP-12I |
8ns 256K x 16 4Mb asynchronous SRAM
10ns 256K x 16 4Mb asynchronous SRAM
12ns 256K x 16 4Mb asynchronous SRAM
|
GSI Technology
|
| R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| AS7C164 AS7C164-20 AS7C164-20JC AS7C164-12 AS7C164 |
8K X 8 STANDARD SRAM, 12 ns, PDSO28
SRAM - 5V Fast Asynchronous
5V 8K X 8 CMOS SRAM
|
ALSC[Alliance Semiconductor Corporation]
|
| GS78132B-12I GS78132B GS78132B-10 GS78132B-10I GS7 |
8Mb56K x 32Bit）Asynchronous SRAM(8M位（256K x 32位）异步静态RAM) 8MB的（256 × 32位）异步SRAM00万位56K × 32位）异步静态RAM）的
256K x 32 8Mb Asynchronous SRAM
|
GSI Technology, Inc.
|
| N01L63W3AB25I N01L63W3AB25IT N01L63W3A |
1 Mb Ultra-Low Power Asynchronous CMOS SRAM
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
|
ON Semiconductor
|
| EDI8L24128C12BC EDI8L24128C15BC |
12ns; 5V power supply; 128K x 24 asynchronous SRAM CMOS
15ns; 5V power supply; 128K x 24 asynchronous SRAM CMOS
|
White Electronic Designs
|
| IC61LV12816 IC61LV12816-8TI IC61LV12816-10B IC61LV |
128K x 16 Hight Speed SRAM with 3.3V 128K的16 Hight高速SRAM.3V
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Toshiba, Corp.
Linear Technology, Corp.
Electronic Theatre Controls, Inc.
ICSI[Integrated Circuit Solution Inc]
|
| M68AW128ML55ND6F M68AW128ML70ZB6T M68AW128M M68AW1 |
128K X 16 STANDARD SRAM, 70 ns, PDSO44
2兆位28K的16.0V异步SRAM
BACKSHELL
2 Mbit (128K x16) 3.0V Asynchronous SRAM
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM
JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70
WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA
High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
|
Integrated Device Technology, Inc.
IDT
|
