| PART |
Description |
Maker |
| MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| 7MBP10PE120 7MBR10PE120 |
IGBT module (S series)
IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
| MG400J2YS60A |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
From old datasheet system
|
Toshiba Semiconductor
|
| PSHI50D-06 PSHI50D_06 PSHI50D/06 PSHI50D06 |
IGBT Module
IGBT Module Short Circuit SOA Capability
|
Powersem GmbH
|
| 4MBI400VG-060R-50 |
IGBT MODULE (V series) 600V / 400A / IGBT, RB-IGBT 4 in one package
|
Fuji Electric
|
| BSM75GD120DN2 075D12N2 C67070-A2516-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| DIM800DDM17-A000 |
Dual Switch IGBT Module 800 A, 1700 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
|
| CPV363MM |
IGBT SIP MODULE Short Circuit Rated Fast IGBT
|
IRF[International Rectifier]
|
| 1MBI300F-060 |
300 A, 600 V, N-CHANNEL IGBT
IGBT MODULE(F series)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
