| PART |
Description |
Maker |
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| NEL230397 NEM2708B20 NEM2310B20 NEM1725B20 NEL2301 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | STX-M3
TRANSISTOR | BJT | NPN | 3.6A I(C) | RFMOD
TRANSISTOR | BJT | NPN | 7.2A I(C) | RFMOD 晶体管|晶体管|叩| 7.2AI（丙）| RFMOD
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 600MA I(C) | STX-M3 晶体管|晶体管|叩| 20V的五（巴西）总裁| 600毫安一（c）|希捷- M3
TRANSISTOR | BJT | NPN | 4.5A I(C) | FO-57CVAR 晶体管|晶体管|叩| 4.5AI（丙）|7CVAR
|
Abracon, Corp.
Renesas Electronics, Corp.
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
| 2N1080 2N5409 2N2202 2N4350 2N4242 2N3142 2N3141 2 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-10
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-36
Open-Drain SOT µP Reset Circuit
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 5A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-210AC
晶体管|晶体管|进步党| 60V的五（巴西）总裁| 60mA的一（c）|1
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 350MA I(C) | TO-5 晶体管|晶体管|叩| 40V的五（巴西）总裁| 350mA的一（c）|
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4 晶体管|晶体管|叩| 50V五（巴西）总裁| 10A条一（c）|个STR - 1 / 4
Open-Drain SOT µP Reset Circuit
|
Winbond Electronics, Corp.
|
| CIL858O CIL859O CIL2229Y CIL2331 CSC2331 CIL857O C |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-237
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | TO-237
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 700MA I(C) | TO-237AA
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | TO-237VAR
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 1.5A I(C) | TO-237AA
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 1.5A I(C) | TO-237
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | TO-237 晶体管|晶体管|进步党| 160V五（巴西）总裁|37
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1.5A I(C) | TO-237AA
|
Infineon Technologies AG
|
| CSC4115 CSC4115BC |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | TO-92
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| BSY91 BSY81 BSY84 BSS59 BSW39 BSV84 BSW52 BSW51 BS |
Transient Voltage Suppressor Diodes
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-39
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 1A I(C) | TO-39
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | TO-39
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | TO-39
晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）| TO - 39封装
TRANSISTOR | BJT | PNP | TO-39 晶体管|晶体管|进步党| TO - 39封装
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | TO-39 晶体管|晶体管|叩| 40V的五（巴西）总裁| TO - 39封装
|
Kycon, Inc.
|
| 2SD1934 0320 2SD1934Q |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92
From old datasheet system
|
Matsshita / Panasonic
|
| 2SD1628F 2SD1628G 2SD1628E |
TRANSISTOR,BJT,NPN,20V V(BR)CEO,5A I(C),SOT-89
From old datasheet system
|
Sanyo Semiconductor Corp
|
