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74VHCT574M - ACTIVE LOW P-P WITH WDI, MR, -40C to 125C, 5-SOT-23, T/R

74VHCT574M_2812556.PDF Datasheet

 
Part No. 74VHCT574M
Description ACTIVE LOW P-P WITH WDI, MR, -40C to 125C, 5-SOT-23, T/R

File Size 314.52K  /  9 Page  

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Part: 74VHCT574AM
Maker: Fairchild Semiconductor
Pack: ETC
Stock: Reserved
Unit price for :
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 Full text search : ACTIVE LOW P-P WITH WDI, MR, -40C to 125C, 5-SOT-23, T/R
 Product Description search : ACTIVE LOW P-P WITH WDI, MR, -40C to 125C, 5-SOT-23, T/R


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74VHCT574A 74VHCT574ASJ 74VHCT574AN 74VHCT574AMTC ACTIVE HIGH P-P WITH WDI, MR, -40C to 125C, 5-SOT-23, T/R
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Active low P-P with WDI, MR, -40C to 125C, 5-SOT-23, T/R
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Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
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Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
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Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
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Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
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Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
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Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
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