| PART |
Description |
Maker |
| NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| ICE3A1065L ICE3A1565L ICE3B0365L |
OFF-LINE SMPS CURRENT MODE CONTROLLER WITH INTEGRATED 650V STARTUP CELL/DEPLETION COOLMOS⒙ AND LATCHED OFF MODE
Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/Depletion CoolMOS??and Latched off Mode
Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/Depletion CoolMOS⑩ and Latched off Mode
|
Infineon Technologies AG
|
| SML100A9 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
TT electronics Semelab Limited
Semelab(Magnatec)
|
| SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| ICE3AS03LJG |
Off-Line SMPS Current Mode Controller with integrated 500V Startup Cell ( Latched and frequency jitter Mode )
|
Infineon Technologies AG
|
| ICE3BR1065J11 |
Off-Line SMPS Current Mode Controller with integrated 650V CoolMOS? and Startup cell (frequency jitter Mode) in DIP-8
|
Infineon Technologies AG
|
| ICE3BR1465JF |
Off-Line SMPS Current Mode Controllerwith integrated 650V CoolMOS? and Startup cell (frequency jitter Mode) in FullPak
|
Infineon Technologies AG
|
| 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
|
Vishay Siliconix
Vishay Intertechnology,Inc.
|
| ICE2A165 ICE2A0565 |
IC,SMPS CONTROLLER,CURRENT-MODE,DIP,8PIN,PLASTIC
IC,SMPS CONTROLLER,CURRENT-MODE,CMOS,DIP,8PIN,PLASTIC
|
Infineon
|
| MAX726HECM MAX726HCCM MAX726HCWE |
Current-Mode SMPS Controller
|
Maxim Integrated Products, Inc.
|
| CS5126D8 |
Current-Mode SMPS Controller 电流模式开关电源控制器
|
Rochester Electronics, LLC
|
