| PART |
Description |
Maker |
| GBJ25005-BP GBJ2504-BP GBJ2510-BP GBJ2502-BP GBJ25 |
RECT BRIDGE GPP 25A 50V GBJ 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 400V GBJ 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 1000V GBJ 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 200V GBJ 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
25 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
Micro Commercial Compon...
|
| GBU6J GBU6J-BP GBU6A-BP GBU6D-BP GBU6M-BP GBU6B-BP |
6 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE GPP 6A 600V GBU 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 6A 800V GBU 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
|
Micro Commercial Compon...
天津环球磁卡股份有限公司
Micro Commercial Components, Corp.
|
| MB251W-BP MB254W-BP MB2510W-BP MB2505W-BP MB256W-B |
25 Amp Single Phase Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE 25A 1000V WIRE LEADS 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
天津环球磁卡股份有限公司
http://
Micro Commercial Components, Corp.
Micro Commercial Compon...
|
| HC26 HC38 HC35 HC79R2J224K HC26R2A103K HC26R2A123K |
NTE IC, POWER: 6 W, PACKAGE: 10 PIN SIP
SRAM Memory IC; Memory Type:MOS SRAM; Interface Type:Serial; Access Time, Tacc:300ns; Package/Case:22-DIP; Mounting Type:Through Hole
Voltage Regulator IC; Output Current:100mA; Output Voltage:9V; Package/Case:3-TO-92; Voltage Regulator Type:Positive Voltage; Mounting Type:Through
DIODE ZENER 150MW 33V 0603
RECT FAST REC 400V 8A TO-220A 高压多层陶瓷电容
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):250mA; Forward Voltage Max, VF:1.25V; Vf Test Current:200mA; Reverse Recovery Time, trr:50ns; Power Dissipation, Pd:400mW 高压多层陶瓷电容
MEDIUM/HIGH VOLTAGE MULTILAYER CERAMIC CAPACITORS 高压多层陶瓷电容
RECT FAST REC 600V 8A TO-220A 高压多层陶瓷电容
RECTIFIER BRIDGE 10A 100V 170A-ifsm 1.05V-vf 10uA-ir GBJ 15/TUBE 高压多层陶瓷电容
|
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| MUN5316DW1T1 MUN5313DW1T1 MUN5311DW1T1 MUN53XXDW1T |
Dual Bias Resistor Transistors
POT 200 OHM 3/4 RECT CERM MT
|
LRC[Leshan Radio Company]
乐山无线电股份有限公
|
| DRD3E DRD3G DRD3 DRD3B DRD3C |
DIODE 1N4002 RECTIFYING
RECT, SILCN, 50V, DO-41
3.0A Reverse Blocking Thyristor
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| NCP1411DMR NCP1411DMR2 NCP1411DMR2G NCP1411D NCP14 |
Sync-Rect PFM Step-Up DC-DC Converter with Low-Battery Detector and Ring-Killer
|
ONSEMI[ON Semiconductor]
|
| NCP1423DMR2 |
200mA Sync-Rect PFM Step-Up DC-DC Converter with Ring-Killer
From old datasheet system
|
on semi
|
| HER301-T |
RECT HIGH-EFF 50V 3A DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Diodes, Inc.
|
| 1BQ40 1BQ20 |
1A SINGLE PHASE D.I.L SCHOTTKY BRIDGE
40V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package
20V 1A Schottky BRIDGE Diode in a D-70 (Bridge) package
1 A, 40 V, SILICON, BRIDGE RECTIFIER DIODE
DIODE 1 A, 20 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DIP-4, Bridge Rectifier Diode
|
IRF[International Rectifier]
Vishay Semiconductors
|
