| PART |
Description |
Maker |
| BLL6H0514-25 |
LDMOS Driver Transistor
|
Philips Semiconductors
|
| BLP10H605 |
Broadband LDMOS driver transistor
|
NXP Semiconductors
|
| BLL1214-35 |
L-band radar LDMOS driver transistor
|
NXP Semiconductors
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| TMF8901B |
Si RF LDMOS Transistor
|
AUK corp
|
| BLF8G27LS-140V-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF8G27LS-100GV |
Power LDMOS transistor
|
NXP Semiconductors
|
| LX723-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF188XRG-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
