| PART |
Description |
Maker |
| HYMP512U648-E3/C4 HYMP512U728-E3/C4 HYMP532U646-E3 |
240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb 1st ver.
Versatile Miniature Switch, High Performance 64M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
Versatile Miniature Switch, High Performance 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| PD488588FF-C80-40-DH1 PD488588FF |
288M bits Direct Rambus DRAM for High Performance Solution
|
ELPIDA[Elpida Memory]
|
| V53C404 |
High Performance / Low Power 1M x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| V53C466Z V53C466J |
High Performance / Low Power 64K x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| V54C365164VD |
HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
|
Mosel Vitelic Corp
|
| MN103SE5 MN103SFE5P |
32-bit High Performance Microcomputers MN103S Series
Transfer mode: Word transfer. Burst transfer. Intermittent transfer
|
Panasonic Semiconductor
|
| V54C365804VB |
High Performance PC100/125MHz 3.3 Volt 8M X 8 Synchronous DRAM(3.3V高性能pc100/125MHz 8Mx8同步动态RAM)
|
Mosel Vitelic, Corp.
|
| AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
ETC[ETC]
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
Alliance Semiconductor ...
|
| 5962-9951901QYA 5962-9951902QYA 5962-9952001QYA 59 |
5V, ISR high-performance CPLDs, 64 macrocells, 125MHz
5V, ISR high-performance CPLDs, 64 macrocells, 154MHz
3.3V, ISR high-performance CPLDs, 64 macrocells, 100MHz
3.3V, ISR high-performance CPLDs, 128 macrocells, 83MHz
3.3V, ISR high-performance CPLDs, 256 macrocells, 66MHz
5V, ISR high-performance CPLDs, 512 macrocells, 100MHz
3.3V, ISR high-performance CPLDs, 512 macrocells, 66MHz
3.3V, ISR high-performance CPLDs, 64 macrocells, 143MHz
|
Cypress
|
| MT8D432M-60B MT2D132M-60B MT4D232M-60B MT2DT132M-6 |
x32 Burst EDO Page Mode DRAM Module X32号，脉冲EDO页面模式内存模块
|
Micron Technology, Inc.
|
| V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| V53C104H V53C104HP50 V53C104HP55L V53C104HP40 V53C |
Ultra-High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
ULTRA-HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp]
|
