PART |
Description |
Maker |
MGFL48V1920 MGFL48V192011 |
1.9-2.0 GHz BAND / 60W
|
Mitsubishi Electric Semiconductor
|
MGFL48L1920 MGFL48V1920 |
1.9-2.0GHz BAND 60W GaAs FET 1.9-2.0 GHz BAND 60W GaAs FET
|
Mitsubishi Electric Corporation
|
MF-MSMD030 MF-MSMD020 MF-MSMD010 MF-MSMD014 MF-MSM |
Ka Band LNA Q-band Power Amplifier 17 - 43 GHz MPA/Multiplier Ka-Band Power Amplifier 27 - 31 GHz 2W Balanced Power Amplifier K Band LNA Ka Band HPA PTC Resettable Fuses
|
Bourns Inc. Bourns Electronic Solutions
|
MGFL48L1920 |
1.9-2.0GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFL48V1920 |
From old datasheet system 1.9-2.0GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
PH1516-60 |
Wireless Bipolar Power Transistor 60W, 1450-1550 GHz
|
M/A-COM Technology Solutions, Inc.
|
SST13LP05 SST13LP05-MLCF SST13LP05-MLCF-K |
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
|
SST[Silicon Storage Technology, Inc]
|
BCM43340 BCM43340HKUBG BCM43340XKUBG |
Single-Chip, Dual-Band (2.4 GHz/5 GHz) IEEE 802.11 a/b/g/n MAC/Baseband/Radio with Integrated Bluetooth 4.0
|
Cypress Semiconductor
|
MAAMML0019 |
X -> Ka Band, Connectorised Tripler: 8 - 10 GHz -> 24 - 30 GHz X -> Ka Band, Connectorised Tripler: 8 - 10 GHz -> 24 - 30 GHz
|
MACOM[Tyco Electronics]
|
MB54608B MB54608L MB54608LPFV MB54608LPV1 |
1.0 GHz band Low Power I/Q Modulator For Direct Conversion 800 MHz - 1000 MHz RF/MICROWAVE I/Q MODULATOR 1.0 GHz band Low Power I/Q Modulator For Direct Conversion 1.0 GHz频段的低功率的I / Q调制器的直接转换
|
Fujitsu Microelectronics Fujitsu Component Limited. FUJITSU[Fujitsu Media Devices Limited] Fujitsu, Ltd.
|
MGFK39V4045 MGFK39V404511 |
14.0-14.5 GHz BAND / 8W
|
Mitsubishi Electric Semiconductor
|