PART |
Description |
Maker |
TIM5964-60SL08 |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
TIM3742-8SL-341 |
IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
TIM5964-16SL-422 |
IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz
|
Toshiba Semiconductor
|
TIM1314-9L |
IM3(Min.)=−25dBc at Po=33dBm Single Carrier Level
|
Toshiba Semiconductor
|
STGIPS14K60 |
IGBT intelligent power module (IPM) 12 A, 600 V, DBC isolated, SDIP-25L molded
|
STMicroelectronics
|
STGIPS20K60 |
IGBT intelligent power module (IPM) 17 A, 600 V, DBC isolated SDIP-25L molded
|
STMicroelectronics
|
TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Semiconductor
|
HMC586LC4B |
4 - 8 GHz, 5dBm Pout, -100dBc/Hz SSB Phase Noise@100kHz WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4.0 - 8.0 GHz
|
Hittite Microwave Corporation
|
BGA612 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 8dBm, SOT343 Silicon Germanium Broadband MMIC Amplifier
|
INFINEON[Infineon Technologies AG]
|